Shih Han Lo

TL;DR: An unprecedented ZT of 2.6 ± 0.3 at 923 K is reported in SnSe single crystals measured along the b axis of the room-temperature orthorhombic unit cell, which highlights alternative strategies to nanostructuring for achieving high thermoelectric performance.

TL;DR: It is shown that Sn self-compensation can effectively reduce the Sn vacancies and decrease the hole carrier density, and alloying with Cd atoms enables a form of valence band engineering that improves the high-temperature thermoelectric performance.

TL;DR: Doping studies show that the power factor maximum for pure n-type PbS can be raised substantially to ~12 μW cm(-1) K(-2) at >723 K using 1.0 mol % PbCl(2) as the electron donor dopant, and the lattice thermal conductivity of Pb S can be greatly reduced by adding selected metal sulfide phases.

TL;DR: A design strategy is demonstrated which provides for simultaneous improvement of electrical and thermal properties of p-type PbSe and leads to ZT ~ 1.6 at 923 K, the highest ever reported for a tellurium-free chalcogenide.

TL;DR: The thermoelectric properties of the pseudoternary 2% Na-doped (PbTe)1-2x( PbSe)x(PbS)x system is reported, which is an excellent platform to study phase competition between entropically driven atomic mixing (solid solution behavior) and enthalpy-driven phase separation.