Motivated by emerging battery-operated applications that demand intensive computation in portable environments, techniques are investigated which reduce power consumption in CMOS digital circuits while maintaining computational throughput. Techniques for low-power operation are shown which use the lowest possible supply voltage coupled with architectural, logic style, circuit, and technology optimizations. An architecturally based scaling strategy is presented which indicates that the optimum voltage is much lower than that determined by other scaling considerations. This optimum is achieved by trading increased silicon area for reduced power consumption. >

/pdf/low-power-cmos-digital-design-52v6aautu5.pdf

Low-power CMOS digital design

Coinage metals, such as Au, Ag, and Cu, have been important materials throughout history.1 While in ancient cultures they were admired primarily for their ability to reflect light, their applications have become far more sophisticated with our increased understanding and control of the atomic world. Today, these metals are widely used in electronics, catalysis, and as structural materials, but when they are fashioned into structures with nanometer-sized dimensions, they also become enablers for a completely different set of applications that involve light. These new applications go far beyond merely reflecting light, and have renewed our interest in maneuvering the interactions between metals and light in a field known as plasmonics.2–6

In plasmonics, the metal nanostructures can serve as antennas to convert light into localized electric fields (E-fields) or as waveguides to route light to desired locations with nanometer precision. These applications are made possible through a strong interaction between incident light and free electrons in the nanostructures. With a tight control over the nanostructures in terms of size and shape, light can be effectively manipulated and controlled with unprecedented accuracy.3,7 While many new technologies stand to be realized from plasmonics, with notable examples including superlenses,8 invisible cloaks,9 and quantum computing,10,11 conventional technologies like microprocessors and photovoltaic devices could also be made significantly faster and more efficient with the integration of plasmonic nanostructures.12–15 Of the metals, Ag has probably played the most important role in the development of plasmonics, and its unique properties make it well-suited for most of the next-generation plasmonic technologies.16–18

1.1. What is Plasmonics?
Plasmonics is related to the localization, guiding, and manipulation of electromagnetic waves beyond the diffraction limit and down to the nanometer length scale.4,6 The key component of plasmonics is a metal, because it supports surface plasmon polariton modes (indicated as surface plasmons or SPs throughout this review), which are electromagnetic waves coupled to the collective oscillations of free electrons in the metal.

While there are a rich variety of plasmonic metal nanostructures, they can be differentiated based on the plasmonic modes they support: localized surface plasmons (LSPs) or propagating surface plasmons (PSPs).5,19 In LSPs, the time-varying electric field associated with the light (Eo) exerts a force on the gas of negatively charged electrons in the conduction band of the metal and drives them to oscillate collectively. At a certain excitation frequency (w), this oscillation will be in resonance with the incident light, resulting in a strong oscillation of the surface electrons, commonly known as a localized surface plasmon resonance (LSPR) mode.20 This phenomenon is illustrated in Figure 1A. Structures that support LSPRs experience a uniform Eo when excited by light as their dimensions are much smaller than the wavelength of the light.



Figure 1

Schematic illustration of the two types of plasmonic nanostructures discussed in this article as excited by the electric field (Eo) of incident light with wavevector (k). In (A) the nanostructure is smaller than the wavelength of light and the free electrons ...



In contrast, PSPs are supported by structures that have at least one dimension that approaches the excitation wavelength, as shown in Figure 1B.4 In this case, the Eo is not uniform across the structure and other effects must be considered. In such a structure, like a nanowire for example, SPs propagate back and forth between the ends of the structure. This can be described as a Fabry-Perot resonator with resonance condition l=nλsp, where l is the length of the nanowire, n is an integer, and λsp is the wavelength of the PSP mode.21,22 Reflection from the ends of the structure must also be considered, which can change the phase and resonant length. Propagation lengths can be in the tens of micrometers (for nanowires) and the PSP waves can be manipulated by controlling the geometrical parameters of the structure.23

/pdf/controlling-the-synthesis-and-assembly-of-silver-1ktlgomyt6.pdf

Controlling the synthesis and assembly of silver nanostructures for plasmonic applications

Nanostructured carbon materials are potentially of great technological interest for the development of electronic1,2, catalytic3,4 and hydrogen-storage systems5,6. Here we describe a general strategy for the synthesis of highly ordered, rigid arrays of nanoporous carbon having uniform but tunable diameters (typically 6 nanometres inside and 9 nanometres outside). These structures are formed by using ordered mesoporous silicas as templates, the removal of which leaves a partially ordered graphitic framework. The resulting material supports a high dispersion of platinum nanoparticles, exceeding that of other common microporous carbon materials (such as carbon black, charcoal and activated carbon fibres). The platinum cluster diameter can be controlled to below 3 nanometres, and the high dispersion of these metal clusters gives rise to promising electrocatalytic activity for oxygen reduction, which could prove to be practically relevant for fuel-cell technologies. These nanomaterials can also be prepared in the form of free-standing films by using ordered silica films as the templates.

Ordered nanoporous arrays of carbon supporting high dispersions of platinum nanoparticles

The fabrication methods of the microelectronics industry have been refined to produce ever smaller devices, but will soon reach their fundamental limits. A promising alternative route to even smaller functional systems with nanometre dimensions is the autonomous ordering and assembly of atoms and molecules on atomically well-defined surfaces. This approach combines ease of fabrication with exquisite control over the shape, composition and mesoscale organization of the surface structures formed. Once the mechanisms controlling the self-ordering phenomena are fully understood, the self-assembly and growth processes can be steered to create a wide range of surface nanostructures from metallic, semiconducting and molecular materials.

/pdf/engineering-atomic-and-molecular-nanostructures-at-surfaces-2sqr7sjd15.pdf

Engineering atomic and molecular nanostructures at surfaces

This thesis explores transport phenomena in nanochannels on a chip. Fundamental nanofluidic ionic studies form the basis for novel separation and preconcentration applications for proteomic purposes. The measurements were performed with 50-nm-high 1D nanochannels, which are easily accessible from both sides by two microchannels. Nanometer characteristic apertures were manufactured in the bonded structure of Pyrex-amorphous silicon – Pyrex, in which the thickness of the amorphous silicon layer serves as a spacer to define the height of the nanochannels. The geometry of the nanometer-sized apertures is well defined, which simplifies the modeling of the transport across them. Compared to biological pores, the present nanochannels in Pyrex offer increased stability. Fundamental characteristics of nanometer-sized apertures were obtained by impedance spectroscopy measurements of the nanochannel at different ionic strengths and pH values. A conductance plateau (on a log-log scale) was modeled and measured, establishing due to the dominance of the surface charge density in the nanochannels, which induces an excess of mobile counterions to maintain electroneutrality. The nanochannel conductance can be regulated at low ionic strengths by pH adjustment, and by an external voltage applied on the chip to change the zeta potential. This field-effect allows the regulation of ionic flow which can be exploited for the fabrication of nanofluidic devices. Fluorescence measurements confirm that 50-nm-high nanochannels show an exclusion of co-ions and an enrichment of counterions at low ionic strengths. This permselectivity is related to the increasing thickness of the electrical double layer (EDL) with decreasing salt concentrations, which results in an EDL overlap in an aperture if the height of the nanochannel and the thickness of the EDL are comparable in size. The diffusive transport of charged species and therefore the exclusion-enrichment effect was described with a simple model based on the Poisson-Boltzmann equation. The negatively charged Pyrex surface of the nanometer characteristic apertures can be inversed with chemical surface pretreatments, resulting in an exclusion of cations and an enrichment of anions. When a pressure gradient is applied across the nanochannels, charged molecules are electrostatically rejected at the entrance of the nanometer-sized apertures, which can be used for separation processes. Proteomic applications are presented such as the separation and preconcentration of proteins. The diffusion of Lectin proteins with different isoelectric points and very similar compositions were controlled by regulating the pH value of the buffer. When the proteins are neutral at their pI value, the diffusion coefficient is maximal because the biomolecules does not interact electrostatically with the charged surfaces of the nanochannel. This led to a fast separation of three Lectin proteins across the nanochannel. The pI values measured in this experiment are slightly shifted compared to the values obtained with isoelectric focusing because of reversible adsorption of proteins on the walls which affects the pH value in the nanochannel. An important application in the proteomic field is the preconcentration of biomolecules. By applying an electric field across the nanochannel, anionic and cationic analytes were preconcentrated on the cathodic side of the nanometer-sized aperture whereas on the anodic side depletion of ions was observed. This is due to concentration polarization, a complex of effects related to the formation of ionic concentration gradients in the electrolyte solution adjacent to an ion-selective interface. It was measured that the preconcentration factor increased with the net charge of the molecule, leading to a preconcentration factor of > 600 for rGFP proteins in 9 minutes. Such preconcentrations are important in micro total analysis systems to achieve increased detection signals of analytes contained in dilute solutions. Compared to cylindrical pores, our fabrication process allows the realization of nanochannels on a chip in which the exclusion-enrichment effect and a big flux across the nanometer-sized aperture can be achieved, showing the interest for possible micro total analysis system applications. The described exclusion-enrichment effect as well as concentration polarization play an important role in transport phenomena in nanofluidics. The appendix includes preliminary investigations in DNA molecule separation and fluorescence correlation spectroscopy measurements, which allows investigating the behavior of molecules in the nanochannel itself.

/pdf/transport-phenomena-in-nanofluidics-1di3nwdyom.pdf

Transport phenomena in nanofluidics

The phenomenal rate of increase in the integration density of silicon chips has been sustained in large part by advances in optical lithography--the process that patterns and guides the fabrication of the component semiconductor devices and circuitry. Although the introduction of shorter-wavelength light sources and resolution-enhancement techniques should help maintain the current rate of device miniaturization for several more years, a point will be reached where optical lithography can no longer attain the required feature sizes. Several alternative lithographic techniques under development have the capability to overcome these resolution limits but, at present, no obvious successor to optical lithography has emerged.

Pushing the limits of lithography

In forming a thin film pattern, first a seed material film is formed on a substrate and then exposed using electron beam lithography, for example, in the shape of the pattern. The latent image is then removed and an oriented material is deposited on one of the seed material and the substrtate, which have different hydrophilicity properties, to form the pattern. The oriented film is formed by an LB film forming method, in one example, and in another example the LB film material is a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20%.

Method for forming a pattern and forming a thin film used in pattern formation

The development of optical lithography has promoted the development of ultralarge scale integration (ULSI) devices. However, optical lithography is now facing serious obstacles due to the limitations in wavelength. Higher resolution with sufficient depth of focus is the most important requirement for ULSI engineers. To satisfy this requirement, many technologies for resolution improvement and new optical image formation technologies such as phase shifting and focus latitude enhancement exposure (FLEX) are reviewed, and a future perspective on optical lithography is also discussed in this paper.

Resolution limits of optical lithography

A system and method are provided for compensating for proximity effects between selected adjacent portions of pattern elements on an integrated circuit wafer where it is determined by simulation that undesirable resist patterns will result. The subject lithography system includes projecting an electron beam onto the wafer through an aperture plate of pattern elements to obtain the desired beam pattern. An aperture mask includes a plurality of first portions corresponding to first wafer circuit element portions spaced for avoiding proximity effects on the wafer and a plurality of second portions corresponding to second element portions spaced for obtaining proximity effects between elements on the wafer. The plurality of second portions are sized to have an increased adjacent spacing relative to a resultant adjacent spacing of the corresponding second element portions whereby the resultant adjacent spacing of the second element portions on the wafer is selectively reduced by the proximity effects. Alternatively, or in addition, a wire mesh is provided at the second portions of the aperture plate to reduce the beam intensity for corresponding reduction of the proximity effects.

Electron beam lithography system and method

The origin of ultra small edge roughness in delineated resist patterns (nano edge roughness) is investigated from the viewpoint of molecular structures of the base polymers of the resists. In this article, conventional two-component negative-type electron beam resists are studied to clarify the correlation of the nano edge roughness with base polymers. The base polymers are cresol novolak and polyvinylphenol mixed with the same concentrations of photoactive azide compound. The weight-average molecular weight (Mw) and polydispersity (Mw/Mn) of the base resins are controlled. Nanometer feature microscopic surface characteristics obtained with an atomic force microscope (AFM) show that the cresol novolak-based resist exhibits a rougher surface than the polyvinylphenol-based one. Nano edge roughness can be suppressed by using base resins with lower Mw and Mw/Mn, suggesting that nano edge roughness reflects the molecular characteristics of the base polymers. There is nanometer level swelling in resist patterns (nano swelling) in polyvinylphenol-based resist. These results suggest that the structures of the base polymers and the interaction with developers affect the nano edge roughness.

Shinji Okazaki

Papers

Pushing the limits of lithography

Method for forming a pattern and forming a thin film used in pattern formation

Resolution limits of optical lithography

Electron beam lithography system and method

Correlation of Nano Edge Roughness in Resist Patterns with Base Polymers