S
Shriram Ramanathan
Researcher at Purdue University
Publications - 396
Citations - 15057
Shriram Ramanathan is an academic researcher from Purdue University. The author has contributed to research in topics: Thin film & Oxide. The author has an hindex of 58, co-authored 374 publications receiving 12826 citations. Previous affiliations of Shriram Ramanathan include Harvard University & Texas Center for Superconductivity.
Papers
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Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions
TL;DR: In this paper, the authors discuss the role of materials synthesis in influencing functional properties and discuss future research directions that may be worth consideration, concluding with a brief discussion on future directions that are worth consideration.
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Ultra-thin perfect absorber employing a tunable phase change material
Mikhail A. Kats,Deepika Sharma,Jiao Lin,Patrice Genevet,Romain Blanchard,Zheng Yang,M. Mumtaz Qazilbash,Dimitri Basov,Shriram Ramanathan,Federico Capasso +9 more
TL;DR: In this paper, the authors show that perfect absorption can be achieved in a system comprising a single lossy dielectric layer of thickness much smaller than the incident wavelength on an opaque substrate by utilizing the nontrivial phase shifts at interfaces between lossy media.
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A correlated nickelate synaptic transistor.
TL;DR: The demonstration of a synaptic transistor with SmNiO₃, a correlated electron system with insulator-metal transition temperature at 130°C in bulk form, and synaptic spike-timing-dependent plasticity learning behaviour is realized.
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Strongly correlated perovskite fuel cells
You Zhou,Xiaofei Guan,Hua Zhou,Koushik Ramadoss,Suhare Adam,Huajun Liu,Sungsik Lee,Jian Shi,Jian Shi,Masaru Tsuchiya,Dillon D. Fong,Shriram Ramanathan,Shriram Ramanathan +12 more
TL;DR: The ionic conductivity of the nickelate perovskite is comparable to the best-performing solid electrolytes in the same temperature range, with a very low activation energy.
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Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
TL;DR: In this article, the feasibility of integrating a high-permittivity gate dielectric material zirconium oxide into the MOS capacitors fabricated on pure germanium substrates was demonstrated.