Nanotechnology is an emerging field of science. The base of nanotechnology is nanoparticles. The size of nanoparticles ranges from 1 to 100 nm. The nanoparticles are classified into different class...

https://www.tandfonline.com/doi/pdf/10.1080/17518253.2020.1802517

Detail review on chemical, physical and green synthesis, classification, characterizations and applications of nanoparticles

Flexible photodetectors have attracted a great deal of research interest in recent years due to their great possibilities for application in a variety of emerging areas such as flexible, stretchable, implantable, portable, wearable and printed electronics and optoelectronics. Novel functional materials, including materials with zero-dimensional (0D) and one-dimensional (1D) inorganic nanostructures, two-dimensional (2D) layered materials, organic semiconductors and perovskite materials, exhibit appealing electrical and optoelectrical properties, as well as outstanding mechanical flexibility, and have been widely studied as building blocks in cost-effective flexible photodetection. Here, we comprehensively review the outstanding performance of flexible photodetectors made from these novel functional materials reported in recent years. The photoresponse characteristics and flexibility of the devices will be discussed systematically. Summaries and challenges are provided to guide future directions of this vital research field.

Flexible Photodetectors Based on Novel Functional Materials.

It is widely known that excellent intrinsic electronic and optoelectronic advantages of black phosphorus (BP) make it attractive for applications in transistor, logic and optoelectronic devices. However, easy degradation upon exposure to ambient conditions turns out to be the most critical bottleneck in restricting its practical applications. In order to simultaneously achieve good stability and high device performance, a two-dimensional (2D) size-selected black-phosphorus-analogue (BPA), tin monosulfide nanosheets (SnS Ns), with enhanced chemical stability was successfully fabricated by a facile liquid phase exfoliation (LPE) method, followed by a liquid cascade centrifugation (LCC) technique. Similar to BP, SnS shows thickness modulated bandgap energy. The as-prepared SnS Ns were employed to fabricate working electrodes for photoelectrochemical (PEC)-type broadband photodetection for the first time, and they exhibit an appropriate capacity for a self-powered broadband photoresponse. More importantly, due to the weak polar character of Sn–S bonds, the SnS-based photodetector shows strong long-term temporal and cycling stability of ON/OFF switching behaviour without any external protection not only in regular basic electrolytes but also under strong polar conditions including harsh acidic and neutral electrolytes. We therefore anticipate that SnS as an emerging optoelectronic material might be developed towards versatile applications such as photodetection, sensing and modulation, etc.

Black-phosphorus-analogue tin monosulfide: an emerging optoelectronic two-dimensional material for high-performance photodetection with improved stability under ambient/harsh conditions

Ultrathin MoS2 anchored on 3D carbon skeleton containing SnS quantum dots as a high-performance anode for advanced lithium ion batteries

Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the n-type NW channel. Here, we successfully synthesized p-type SnSe and SnS NWs via the chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit an impressive photodetection performance with a high photoconductive gain of 1.5 × 104 (2.8 × 104), good responsivity of 1.0 × 104 A W–1 (1.6 × 104 A W–1), and excellent detectivity of 3.3 × 1012 Jones (2.4 × 1012 Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 μs (1.2 and 15.1 ms), respectively, for the Sn...

High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

This study involves a novel fabrication of a high performance, low cost and flexible (SnS nanoflake based) photodetector on a polyethylene terephthalate (PET) substrate by using chemical bath deposition. The photoresponse properties of the fabricated SnS nanostructure in the ultraviolet (UV) to near infrared (NIR) region were studied. The photodetector was subjected to illumination from four light emitting diodes (LEDs) characterized by spectra peaks of 380, 530, 750 and 850 nm, respectively. The photodetector exhibited a good photoresponse, fast response and high reproducibility with time. The sensitivity values of the photodetector were determined to be approximately 2990, 1604, 2591, and 446 for wavelengths of 380, 530, 750, and 850 nm at a bias voltage of 3 V. At the bias voltage of 5 V, the sensitivity values of 2575, 1262, 1635 and 295 were recorded for 380, 530, 750 and 850 nm respectively. The photodetector also manifests fast photoresponse for the illumination wavelengths. Based on the abovementioned results, in addition to its low cost, flexibility, and non-toxic nature, the SnS photodetector is a promising photoelectronic device that is effectively applicable over the UV-vis-NIR range.

Shrook A. Azzez

Papers

A highly sensitive flexible SnS thin film photodetector in the ultraviolet to near infrared prepared by chemical bath deposition

High performance near infrared photodetector based on cubic crystal structure SnS thin film on a glass substrate

High performance and low-cost UV–Visible–NIR photodetector based on tin sulphide nanostructures

Influence of pH Value on Structural, Optical and Photoresponse Properties of SnS Films Grown via Chemical Bath Deposition

Effect of temperature on hydrothermally grown high-quality single-crystals Mg-doped ZnO nanorods for light-emitting diode application