Showing papers by "Shuit-Tong Lee published in 1986"
TL;DR: In this paper, the selective etch of the unreacted Ti was characterized by four-point probe, X-ray diffraction, and Auger electron spectroscopy, and the oxidation results of Ti suicide formed using RTP in N 2 ambient were compared with those formed using furnace sintering in vacuum/argon ambient and those deposited by cosputtering.
Abstract: Refractory metal suicides have been used widely in VLSI fabrication, owing to their low resistivity, high-temperature compatibility, and oxidiz-ability. In this work, we have studied the titanium suicide formation, using a rapid thermal processor (RTP). Isothermal and isochronal sintering experiments were carried out to determine the appropriate process steps. The selective etch of the unreacted Ti was characterized. The sintered films were characterized by four-point probe, X-ray diffraction, and Auger electron spectroscopy. We also studied the oxidation at 800–1000°C of Ti suicide formed by sintering Ti and polycrystalline silicon using a RTP in N 2 ambient. The oxidation results of Ti suicide formed using RTP in N 2 ambient are compared with those formed using furnace sintering in vacuum/argon ambient and those deposited by cosputtering.