Showing papers by "Shuit-Tong Lee published in 1988"

Mechanism for ion-induced mixing of GaAs-AlGaAs interfaces by rapid thermal annealing

Abstract: A mechanism for the transient‐enhanced interdiffusion of GaAs‐AlGaAs interfaces during rapid thermal annealing of ion‐implanted heterostructures is proposed. The model is based on the solution of the coupled diffusion equations involving the excess vacancies and the post‐implantation Al distribution following ion implantation. Both initial distributions are obtained from the solution of a three‐dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. In general, the model is valid for time frames within which impurity diffusion does not occur appreciably so that impurity‐enhanced diffusion remains a weak effect.