scispace - formally typeset
S

Shuit-Tong Lee

Researcher at Soochow University (Suzhou)

Publications -  1129
Citations -  84313

Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.

Papers
More filters
Journal ArticleDOI

Computation of large systems with an economic basis set: Ab initio calculations of silicon oxide clusters

TL;DR: In this article, an economic basis set was used to determine reliable atomic and electronic structures of the silicon oxide system, which enabled the computation of silicon oxide clusters as large as 16 atoms being performed with considerably high accuracy using a medium level of computation resources.
Journal ArticleDOI

High-efficiency nondoped green organic light-emitting devices

TL;DR: In this paper, a high-efficiency non-oped green organic light-emitting device was demonstrated by using a novel electroluminescent material 3,6-di[8-(7,10-diphenylfluoranthenyl)] phenyl-9-[8,10]-phenylcarbazole (TDPFPC) as an efficient electrofluorescence emitter, which exhibited green emission with Commission Internationale de L'Eclairage coordinates of (0.25, 0.49) and a high current efficiency of 10.1
Journal ArticleDOI

Materials science in China

TL;DR: Wang et al. as discussed by the authors pointed out that farsighted research policies, comprehensive research platforms, talent programmes and huge domestic markets are the impetuses for the fast progress of China's research in materials science.
Journal ArticleDOI

Plasmonic backscattering enhancement for inverted polymer solar cells

TL;DR: In this article, a plasmonic backscattering effect is applied to inverted polymer solar cells to produce localized surface plasmons (LSPs) at the rear anode, thermally deposited Ag nanoparticles (NPs) are embedded in the MoO3 hole extraction layer.
Journal ArticleDOI

Carrier Dynamics in Si Nanowires Fabricated by Metal-Assisted Chemical Etching

TL;DR: Compared to other silicon nanostructures, these relative high values observed for both the carrier lifetime and mobility are the consequences of high crystallinity and surface quality of the nanowires fabricated by the metal-assisted wet chemical etching method.