Shuit-Tong Lee

Bio: Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.

Studying the growth of cubic boron nitride on amorphous tetrahedral carbon interlayers.

Abstract: The growth of cubic boron nitride (cBN) films on bare silicon and amorphous tetrahedral carbon (ta-C) layers prepared on silicon substrates was studied. The cBN films were prepared by radio frequency magnetron sputter deposition at ∼870 °C. The original ta-C interlayers were graphitized and restructured under high temperature and possibly under ion bombardment during BN deposition. The majority of graphitic basal planes were nearly perpendicular to the surface of silicon substrates. The BN films grown on these restructured carbon layers were deposited with higher content of cubic phase and did not show delamination signs. Turbostratic BN (tBN) basal planes extended carbon basal planes and their edges served as cBN nucleation sites. The cBN films grown on textured ta-C interlayers were insensitive to the ambient environment. The residual sp3-bonded carbon phase confined in the interlayers probably acts as a diffusion barrier preventing the oxidation of dangling bonds near BN interface and thus precludes we...

Transient electroluminescence of single and multilayer organic light emitting devices

Abstract: The transient current and electroluminescence response induced by a positive step voltage excitation in both single layer NPB and bi-layer NPB-Alq 3 devices were analyzed in detail. The transport of hole and electron in single NPB layer and bi-layer NPB-Alq 3 devices was investigated, respectively. The hole mobility was measured to be (1-3) x 10 -4 cm 2 V -1 s -1 in NPB, while the electron mobility in the NPB-Alq 3 device was measured to be (4-8) x 10 -6 cm 2 V -1 s -1 . The charge transport delay time in each layer of the bi-layer structure was resolved from the transient current characteristics for voltage pulse amplitude near the turn-on voltage of the device. Such unique measurements applied to the organic bi-layer structures revealed the dynamics of the charge carriers, particularly in terms of the field-dependent mobility.

Photoluminescence of silicon quantum dots in nanospheres

Abstract: Si quantum dots (SiQDs) based nanospheres (SiNSs) were prepared via a novel synthetic strategy. These SiNSs were demonstrated to possess unique dot spacing dependent photoluminescence (PL) up-conversion and surface dependent (N modified surface) down-converted PL. It was demonstrated that a small distance between SiQDs (<5 nm) is the necessary condition for the PL up-conversion of SiNSs, while the surface state of SiQDs will affect the maximum emission wavelength and the PL intensity. The as-prepared SiNSs feature excellent aqueous dispersibility, and their optical properties were found to be stable enough in a specified temperature and pH range.

Oxygen effect on the interface formation between calcium and a polyfluorene film

Abstract: The effect of oxygen on the interface formation between Ca electrode and a poly (9,9-dioctylfluorene) (PFO) film was investigated using x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The XPS results indicated that strong interaction between Ca and C occurred and the lowest unoccupied molecular orbitals (LUMO's) of PFO were affected upon a submonolayer Ca deposition. After ${\mathrm{O}}_{2}$ exposure, the interaction between Ca and C was reduced and the LUMO of PFO was partially recovered. However, too much ${\mathrm{O}}_{2}$ exposure $(g{10}^{5}\mathrm{L}$ in our experiments) would again deteriorate the original LUMO and result in a very wide band gap, which might be due to changes in the chemical structures of PFO in the Ca-doped region after extra ${\mathrm{O}}_{2}$ exposure. The UPS results confirmed that the deformed UPS spectrum after Ca deposition can be partially recovered and the Ca-induced bipolaron states in the former forbidden energy gap could be removed upon ${\mathrm{O}}_{2}$ exposure.

Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties.

Abstract: Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiOx) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiOx shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe–SiOx nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiOx shell acts as an effective insulating layer. The ZnTe–SiOx nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.

A roadmap for graphene

Abstract: Recent years have witnessed many breakthroughs in research on graphene (the first two-dimensional atomic crystal) as well as a significant advance in the mass production of this material. This one-atom-thick fabric of carbon uniquely combines extreme mechanical strength, exceptionally high electronic and thermal conductivities, impermeability to gases, as well as many other supreme properties, all of which make it highly attractive for numerous applications. Here we review recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.

High-performance lithium battery anodes using silicon nanowires

Abstract: There is great interest in developing rechargeable lithium batteries with higher energy capacity and longer cycle life for applications in portable electronic devices, electric vehicles and implantable medical devices. Silicon is an attractive anode material for lithium batteries because it has a low discharge potential and the highest known theoretical charge capacity (4,200 mAh g(-1); ref. 2). Although this is more than ten times higher than existing graphite anodes and much larger than various nitride and oxide materials, silicon anodes have limited applications because silicon's volume changes by 400% upon insertion and extraction of lithium which results in pulverization and capacity fading. Here, we show that silicon nanowire battery electrodes circumvent these issues as they can accommodate large strain without pulverization, provide good electronic contact and conduction, and display short lithium insertion distances. We achieved the theoretical charge capacity for silicon anodes and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.

Nanobelts of Semiconducting Oxides

Abstract: Ultralong beltlike (or ribbonlike) nanostructures (so-called nanobelts) were successfully synthesized for semiconducting oxides of zinc, tin, indium, cadmium, and gallium by simply evaporating the desired commercial metal oxide powders at high temperatures. The as-synthesized oxide nanobelts are pure, structurally uniform, and single crystalline, and most of them are free from defects and dislocations. They have a rectanglelike cross section with typical widths of 30 to 300 nanometers, width-to-thickness ratios of 5 to 10, and lengths of up to a few millimeters. The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures. The nanobelts could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides and building functional devices along individual nanobelts.

Raman spectroscopy as a versatile tool for studying the properties of graphene

Abstract: Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene.

Aggregation-Induced Emission: Together We Shine, United We Soar!

Abstract: Ju Mei,†,‡,∥ Nelson L. C. Leung,†,‡,∥ Ryan T. K. Kwok,†,‡ Jacky W. Y. Lam,†,‡ and Ben Zhong Tang*,†,‡,§ †HKUST-Shenzhen Research Institute, Hi-Tech Park, Nanshan, Shenzhen 518057, China ‡Department of Chemistry, HKUST Jockey Club Institute for Advanced Study, Institute of Molecular Functional Materials, Division of Biomedical Engineering, State Key Laboratory of Molecular Neuroscience, Division of Life Science, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China Guangdong Innovative Research Team, SCUT-HKUST Joint Research Laboratory, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China