Shuit-Tong Lee

Bio: Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.

Role of ytterbium and ytterbium/cesium fluoride on the chemistry of poly(9,9-dioctylfluorene-co-benzothiadiazole) as investigated by photoemission spectroscopy

Abstract: Since ytterbium (Yb) possesses a low work function of 2.6 eV and Yb fluoride generally has a high negative free energy of formation, it is conceivable to use Yb, either directly or parasitically, with a metal fluoride, as a cathode in organic light-emitting diodes (OLEDs). In this work, the electronic structure and chemistry at the interface of Yb/poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) were investigated by ultraviolet and x-ray photoemission spectroscopy (UPS and XPS, respectively). We found that the deposition of Yb on top of F8BT foremost formed organometallic complexes with the sulfur but interacted partly with the nitrogen of F8BT, and eventually formed a Yb–C complex at higher Yb coverages. In the UPS spectra, Yb deposition increased the relative peak intensities corresponding to the σ-bonds originated from the aliphatic side chains, implying that some of the π-conjugated carbons in the polymer backbone may be destroyed. These results agree well with the disappearance of the π-to-π* tra...

Periodic array of intramolecular junctions of silicon nanowires

Abstract: The formation of periodic arrays of intramolecular junctions in silicon nanowires from a single growth process is reported. Scanning tunneling microscopic images show intramolecular junctions formed by fusing together two straight wire segments (∼3 nm in diameter) 5 and 10 nm long, respectively, at an angle of ∼30° with respect to each other. The junction repeats itself in a regular pattern along a nanowire, forming a striking superlattice ∼3 nm in diameter and at least several microns long. Scanning tunneling spectroscopic measurements reveal distinctly different current–voltage curves for the two different segments changing sharply across each junction. The segments are most probably formed by a periodic change of growth direction while the different electronic properties of the two segments forming the junction are attributed to the differences in surface structure and segment diameter.

Solid Confinement of Quantum Dots in ZIF-8 for Efficient and Stable Color-Conversion White LEDs.

Abstract: The powder form and low photoluminescence quantum yield (PLQY) of fluorescent metal-organic frameworks (MOFs) present a serious obstacle to fabricating high-efficiency film-like lighting devices. Here, we present a facile way to produce thin films of CdSex S1-x /ZnS quantum dots (QDs)@ZIF-8 with high PLQY by encapsulating red, green, and blue CdSex S1-x /ZnS QDs in ZIF-8 through a one-pot solid-confinement conversion process. The QDs@ZIF-8 thin film emits warm white light with good color quality and presents good thermal stability and long-term durability.

A roadmap for graphene

Abstract: Recent years have witnessed many breakthroughs in research on graphene (the first two-dimensional atomic crystal) as well as a significant advance in the mass production of this material. This one-atom-thick fabric of carbon uniquely combines extreme mechanical strength, exceptionally high electronic and thermal conductivities, impermeability to gases, as well as many other supreme properties, all of which make it highly attractive for numerous applications. Here we review recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.

High-performance lithium battery anodes using silicon nanowires

Abstract: There is great interest in developing rechargeable lithium batteries with higher energy capacity and longer cycle life for applications in portable electronic devices, electric vehicles and implantable medical devices. Silicon is an attractive anode material for lithium batteries because it has a low discharge potential and the highest known theoretical charge capacity (4,200 mAh g(-1); ref. 2). Although this is more than ten times higher than existing graphite anodes and much larger than various nitride and oxide materials, silicon anodes have limited applications because silicon's volume changes by 400% upon insertion and extraction of lithium which results in pulverization and capacity fading. Here, we show that silicon nanowire battery electrodes circumvent these issues as they can accommodate large strain without pulverization, provide good electronic contact and conduction, and display short lithium insertion distances. We achieved the theoretical charge capacity for silicon anodes and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.

Nanobelts of Semiconducting Oxides

Abstract: Ultralong beltlike (or ribbonlike) nanostructures (so-called nanobelts) were successfully synthesized for semiconducting oxides of zinc, tin, indium, cadmium, and gallium by simply evaporating the desired commercial metal oxide powders at high temperatures. The as-synthesized oxide nanobelts are pure, structurally uniform, and single crystalline, and most of them are free from defects and dislocations. They have a rectanglelike cross section with typical widths of 30 to 300 nanometers, width-to-thickness ratios of 5 to 10, and lengths of up to a few millimeters. The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures. The nanobelts could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides and building functional devices along individual nanobelts.

Raman spectroscopy as a versatile tool for studying the properties of graphene

Abstract: Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene.

Aggregation-Induced Emission: Together We Shine, United We Soar!

Abstract: Ju Mei,†,‡,∥ Nelson L. C. Leung,†,‡,∥ Ryan T. K. Kwok,†,‡ Jacky W. Y. Lam,†,‡ and Ben Zhong Tang*,†,‡,§ †HKUST-Shenzhen Research Institute, Hi-Tech Park, Nanshan, Shenzhen 518057, China ‡Department of Chemistry, HKUST Jockey Club Institute for Advanced Study, Institute of Molecular Functional Materials, Division of Biomedical Engineering, State Key Laboratory of Molecular Neuroscience, Division of Life Science, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China Guangdong Innovative Research Team, SCUT-HKUST Joint Research Laboratory, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China