scispace - formally typeset
Search or ask a question
Author

Shuit-Tong Lee

Bio: Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.
Topics: Silicon, Nanowire, OLED, Electroluminescence, Diamond


Papers
More filters
Journal ArticleDOI
TL;DR: In this article, the electronic structures of tris(8-hydroxyquinoline) aluminum (Alq3) deposited on clean or Cs pre-covered Ag substrates have been studied by ultraviolet photoelectron spectroscopy.

11 citations

Journal ArticleDOI
TL;DR: In this paper, boron-doped nanocrystalline (nc) diamond films were deposited using microwave plasma chemical vapor deposition process in which the growing film surface was continuously bombarded by H+ and hydrocarbon ions.
Abstract: Heavily boron-doped nanocrystalline (nc) diamond films were deposited using microwave plasma chemical vapor deposition process in which the growing film surface was continuously bombarded by H+ and hydrocarbon ions. The dependency of grain size and phase purity on the process parameters and boron incorporation was investigated. Due to boron incorporation the grown nc diamond films show a lower intrinsic compressive stress, which is due to a compensation effect between the boron doping-induced tensile stress and the ion subplantation-induced compressive stress. The nc films show strongly improved electron emission properties. Low-field electron emission and high emission current have been achieved from the films consisting of nanosized diamond grains, showing a long-term stability.

11 citations

Journal ArticleDOI
TL;DR: In this paper, the Si-H bond energies and wet oxidation of SiHx (x ) 1-3 configurations on silicon cluster surfaces have been studied by ab initio calculations and it is found that the Si -H bond energy is simply determined by its local configuration and is about 75.2 to 76.0 kcal/mol, much less than these bond energies.
Abstract: The Si-H bond energies and wet oxidation of SiHx (x ) 1-3) configurations on silicon cluster surfaces have been studied by ab initio calculations. It is found that the Si -H bond energy is simply determined by its local configuration and is about 75.2 to 76.3 kcal/mol for silicon monohydride, 77.9 to 78.9 kcal/mol for silicon dihydride, and 80.9 to 81.6 kcal/mol for silicon trihydride. The evaporation energies of a hydrogen molecule from the dihydride and trihydride configurations are found to be slightly higher than the calculated bond energies. However, when a water molecule reacts with them, the reaction energy barriers are found to be generally smaller than 50.0 kcal/mol, much less than these bond energies. The calculated reaction barriers and heats do not show clear relationships with the bond energies. Rather, the results show that the reaction at SiH2 is the most unfavorable one whereas the most easy reaction may take place at the Si-Si dimer on a (2 1) reconstructed Si(001)-like configuration. Our results indicate that the degradation of hydrogenated silicon nanostructures or bulk silicon surfaces might be significantly determined by the possibility of reaction with water molecules, a hydrogenated surface covered by dihydride configurations being the most inert case.

11 citations

Journal ArticleDOI
TL;DR: In this article, a hierarchical core/shell hierarchical nanostructures were synthesized via solvothermal treatment of FeCl{sub 3{center_dot}6H{sub 2}O and ethanol.

11 citations

Journal ArticleDOI
TL;DR: In this paper, the excitonic fine structure, including splitting due to direct and exchange interactions, has been resolved from silicon nanocrystals and from silicon norods, and the results are analyzed in terms of spin and orbital selection rules indicating that the dimensionality of the exciton determines the relative contribution of the direct Coulomb and the exchange interactions in these nanostructures.
Abstract: The excitonic fine structure, including splitting due to direct and exchange interactions, has experimentally been resolved from silicon nanocrystals and from silicon nanorods. We have found the hierarchy of levels for silicon nanorods to be different from that of silicon nanocrystals with the slower semidark state located above the faster semibright state. The results are analyzed in terms of spin and orbital selection rules indicating that the dimensionality of the exciton determines the relative contribution of the direct Coulomb and the exchange interactions in these nanostructures.

11 citations


Cited by
More filters
Journal ArticleDOI
11 Oct 2012-Nature
TL;DR: This work reviews recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.
Abstract: Recent years have witnessed many breakthroughs in research on graphene (the first two-dimensional atomic crystal) as well as a significant advance in the mass production of this material. This one-atom-thick fabric of carbon uniquely combines extreme mechanical strength, exceptionally high electronic and thermal conductivities, impermeability to gases, as well as many other supreme properties, all of which make it highly attractive for numerous applications. Here we review recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.

7,987 citations

Journal ArticleDOI
TL;DR: The theoretical charge capacity for silicon nanowire battery electrodes is achieved and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.
Abstract: There is great interest in developing rechargeable lithium batteries with higher energy capacity and longer cycle life for applications in portable electronic devices, electric vehicles and implantable medical devices. Silicon is an attractive anode material for lithium batteries because it has a low discharge potential and the highest known theoretical charge capacity (4,200 mAh g(-1); ref. 2). Although this is more than ten times higher than existing graphite anodes and much larger than various nitride and oxide materials, silicon anodes have limited applications because silicon's volume changes by 400% upon insertion and extraction of lithium which results in pulverization and capacity fading. Here, we show that silicon nanowire battery electrodes circumvent these issues as they can accommodate large strain without pulverization, provide good electronic contact and conduction, and display short lithium insertion distances. We achieved the theoretical charge capacity for silicon anodes and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.

6,104 citations

Journal ArticleDOI
09 Mar 2001-Science
TL;DR: The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures, which could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides.
Abstract: Ultralong beltlike (or ribbonlike) nanostructures (so-called nanobelts) were successfully synthesized for semiconducting oxides of zinc, tin, indium, cadmium, and gallium by simply evaporating the desired commercial metal oxide powders at high temperatures. The as-synthesized oxide nanobelts are pure, structurally uniform, and single crystalline, and most of them are free from defects and dislocations. They have a rectanglelike cross section with typical widths of 30 to 300 nanometers, width-to-thickness ratios of 5 to 10, and lengths of up to a few millimeters. The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures. The nanobelts could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides and building functional devices along individual nanobelts.

5,677 citations

Journal ArticleDOI
TL;DR: The state of the art, future directions and open questions in Raman spectroscopy of graphene are reviewed, and essential physical processes whose importance has only recently been recognized are described.
Abstract: Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene.

5,673 citations

Journal ArticleDOI
TL;DR: This paper presents a meta-analysis of the chiral stationary phase transition of Na6(CO3)(SO4)2, a major component of the response of the immune system to Na2CO3.
Abstract: Ju Mei,†,‡,∥ Nelson L. C. Leung,†,‡,∥ Ryan T. K. Kwok,†,‡ Jacky W. Y. Lam,†,‡ and Ben Zhong Tang*,†,‡,§ †HKUST-Shenzhen Research Institute, Hi-Tech Park, Nanshan, Shenzhen 518057, China ‡Department of Chemistry, HKUST Jockey Club Institute for Advanced Study, Institute of Molecular Functional Materials, Division of Biomedical Engineering, State Key Laboratory of Molecular Neuroscience, Division of Life Science, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China Guangdong Innovative Research Team, SCUT-HKUST Joint Research Laboratory, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

5,658 citations