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Shuit-Tong Lee

Bio: Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.
Topics: Silicon, Nanowire, OLED, Electroluminescence, Diamond


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors studied the characteristics and tunneling effects of carbon nanotubes with a semiclassical approach, and showed that the Coulomb blockade is closely related to the structures of systems, and that the necessary condition for Coulomb staircase to occur is that the cathode junction is narrower than the anode.
Abstract: The $I\ensuremath{-}V$ characteristics and tunneling effects of several carbon nanotubes are studied by electronic transport calculations with a semiclassical approach. The electrical currents are obtained by solving master equations connecting different charge states. The charging energies and electronic structures of the nanotubes are calculated by the ab initio density-functional theory. The results show that the Coulomb blockade is closely related to the structures of systems, and that the necessary condition for the Coulomb staircase to occur is that the cathode junction is narrower than that of the anode. The Coulomb staircase, evident at lower temperatures, could be suppressed by temperature elevation.

7 citations

Journal ArticleDOI
TL;DR: In this paper, the structural analysis of tetrahedral carbon (ta-C) films induced by ion beam implantation at high doses has been studied, and it has been shown that the graphitic basal planes are formed preferably in the perpendicular direction to the film surface.

7 citations

Patent
17 Dec 2001
TL;DR: In this article, a method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods, including silicon substrate as the silicon source, and metal foils are used as catalyst.
Abstract: A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.

7 citations

Journal ArticleDOI
TL;DR: In this article, the authors have found that the blue emission band comes from local defects in the silicon dioxide shell of the wires and the red band is caused by interfaces between the silicon oxide shell and the crystalline silicon core.
Abstract: Photoluminescence (PL) spectroscopy and Cathodoluminescence (CL) spectroscopy and imaging have been utilized to resolve red and blue emission bands from silicon nanowires We have found that the blue emission band comes from local defects in the silicon dioxide shell of the wires while the red band comes from interfaces between the silicon dioxide shell and the crystalline silicon core Time-resolved PL spectroscopy of hydrogen- and oxygen-terminated silicon nanowires, indicates that surface chemistry plays an essential role in determining the luminescence properties of the nanowires We suggest that the PL lifetime should be related to nonradiative relaxation processes that take place at the interface of the silicon core and the clad material of the nanowires

7 citations

Journal ArticleDOI
TL;DR: In this paper, the surface-dependent chemical properties of HF-treated silicon nanowires were investigated and shown to accelerate the oxidation rate of copper with an enhancement factor of 10,000, confirmed by x-ray diffraction semiquantitative analysis.
Abstract: HF-treated silicon nanowires exhibited surface-dependent chemical property and accelerated the oxidation rate of copper with the enhancement factor of 10 000, confirmed by x-ray diffraction semi-quantitative analysis. This unexpected oxidation characteristic would make HF-treated silicon nanowires valuable for catalysis applications.

7 citations


Cited by
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Journal ArticleDOI
11 Oct 2012-Nature
TL;DR: This work reviews recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.
Abstract: Recent years have witnessed many breakthroughs in research on graphene (the first two-dimensional atomic crystal) as well as a significant advance in the mass production of this material. This one-atom-thick fabric of carbon uniquely combines extreme mechanical strength, exceptionally high electronic and thermal conductivities, impermeability to gases, as well as many other supreme properties, all of which make it highly attractive for numerous applications. Here we review recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.

7,987 citations

Journal ArticleDOI
TL;DR: The theoretical charge capacity for silicon nanowire battery electrodes is achieved and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.
Abstract: There is great interest in developing rechargeable lithium batteries with higher energy capacity and longer cycle life for applications in portable electronic devices, electric vehicles and implantable medical devices. Silicon is an attractive anode material for lithium batteries because it has a low discharge potential and the highest known theoretical charge capacity (4,200 mAh g(-1); ref. 2). Although this is more than ten times higher than existing graphite anodes and much larger than various nitride and oxide materials, silicon anodes have limited applications because silicon's volume changes by 400% upon insertion and extraction of lithium which results in pulverization and capacity fading. Here, we show that silicon nanowire battery electrodes circumvent these issues as they can accommodate large strain without pulverization, provide good electronic contact and conduction, and display short lithium insertion distances. We achieved the theoretical charge capacity for silicon anodes and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.

6,104 citations

Journal ArticleDOI
09 Mar 2001-Science
TL;DR: The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures, which could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides.
Abstract: Ultralong beltlike (or ribbonlike) nanostructures (so-called nanobelts) were successfully synthesized for semiconducting oxides of zinc, tin, indium, cadmium, and gallium by simply evaporating the desired commercial metal oxide powders at high temperatures. The as-synthesized oxide nanobelts are pure, structurally uniform, and single crystalline, and most of them are free from defects and dislocations. They have a rectanglelike cross section with typical widths of 30 to 300 nanometers, width-to-thickness ratios of 5 to 10, and lengths of up to a few millimeters. The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures. The nanobelts could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides and building functional devices along individual nanobelts.

5,677 citations

Journal ArticleDOI
TL;DR: The state of the art, future directions and open questions in Raman spectroscopy of graphene are reviewed, and essential physical processes whose importance has only recently been recognized are described.
Abstract: Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene.

5,673 citations

Journal ArticleDOI
TL;DR: This paper presents a meta-analysis of the chiral stationary phase transition of Na6(CO3)(SO4)2, a major component of the response of the immune system to Na2CO3.
Abstract: Ju Mei,†,‡,∥ Nelson L. C. Leung,†,‡,∥ Ryan T. K. Kwok,†,‡ Jacky W. Y. Lam,†,‡ and Ben Zhong Tang*,†,‡,§ †HKUST-Shenzhen Research Institute, Hi-Tech Park, Nanshan, Shenzhen 518057, China ‡Department of Chemistry, HKUST Jockey Club Institute for Advanced Study, Institute of Molecular Functional Materials, Division of Biomedical Engineering, State Key Laboratory of Molecular Neuroscience, Division of Life Science, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China Guangdong Innovative Research Team, SCUT-HKUST Joint Research Laboratory, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

5,658 citations