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Shuit-Tong Lee

Bio: Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.
Topics: Silicon, Nanowire, OLED, Electroluminescence, Diamond


Papers
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Journal ArticleDOI
TL;DR: In this article, the influence of the n-type layer in the connecting unit on the performance of tandem organic light-emitting devices (OLEDs) was investigated by systematically varying the metal dopants and the electron-transporting hosts.
Abstract: The present work investigates the influence of the n-type layer in the connecting unit on the performance of tandem organic light-emitting devices (OLEDs). The n-type layer is typically an organic electron-transporting layer doped with reactive metals. By systematically varying the metal dopants and the electron-transporting hosts, we have identified the important factors affecting the performance of the tandem OLEDs. Contrary to common belief, device characteristics were found to be insensitive to metal work functions, as supported by the ultraviolet photoemission spectroscopy results that the lowest unoccupied molecular orbitals of all metal-doped n-type layers studied here have similar energy levels. It suggests that the electron injection barriers from the connecting units are not sensitive to the metal dopant used. On the other hand, it was found that performance of the n-type layers depends on their electrical conductivities which can be improved by using an electron-transporting host with higher electron mobility. This effect is further modulated by the optical transparency of constituent organic layers. The efficiency of tandem OLEDs would decrease as the optical transmittance decreases.

86 citations

Journal ArticleDOI
TL;DR: Both the mechanism and structure of the secondary complex of complex 1 with anion were proposed on the basis of theoretical computation and the studied complex exhibits the remarkable color change and fluorescence quenching upon introducing HSO(4)(-) (or H(2)PO( 4)(-)) anion in acetonitrile.

86 citations

Patent
08 Jun 1999
TL;DR: In this article, a method to produce large amounts of silicon nanowires without requiring the use of any catalysts that may cause contamination is described. But it is not suitable for use in the field of medical applications.
Abstract: Silicon nanowires and silicon nanoparticle chains are formed by the activation of silicon monoxide in the vapor phase. The silicon monoxide source may be solid or gaseous, and the activation may be by thermal excitation, laser ablation, plasma or magnetron sputtering. The present invention produces large amounts of silicon nanowires without requiring the use of any catalysts that may cause contamination.

85 citations

Journal ArticleDOI
TL;DR: In this paper, the intrinsic currentvoltage properties of a ZnO nanowire measured by a four-tip scanning tunneling microscopy (F-STM) were investigated.
Abstract: We report intrinsic current-voltage properties of ZnO nanowire measured by a four-tip scanning tunneling microscopy (F-STM). It is found that after bending the nanowire with the F-STM the conductance is reduced by about five orders of magnitude. The cathodoluminescent spectra indicate that the ZnO nanowires contain a sizable amount of defects in the surface region, responsible for their conduction. It is suggested that the observed huge conductance changes are caused by the shifting of the surface defect states in the ZnO nanowires in response to the applied surface strain.

85 citations

Journal ArticleDOI
TL;DR: In this paper, silicon nanowires were employed as the reinforcement material in protein molecular imprinting with dopamine as the monomer and bovine hemoglobin as the template molecule.
Abstract: Nanomaterials have offered an opportunity for molecular imprinting to extract templates easily and achieve large binding capacity. In this paper, silicon nanowires were employed as the reinforcement material in protein molecular imprinting with dopamine as the monomer and bovine hemoglobin as the template molecule. In the experiments, the imprinted nanowires showed fast adsorption kinetics (took up 75% of the equilibrium amount during only 5 min), significant selectivity and large binding capacity (213.7 mg g−1) for the template protein. Furthermore, the stability and regeneration were also investigated, which indicated that the imprinted nanowires had outstanding reusability.

84 citations


Cited by
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Journal ArticleDOI
11 Oct 2012-Nature
TL;DR: This work reviews recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.
Abstract: Recent years have witnessed many breakthroughs in research on graphene (the first two-dimensional atomic crystal) as well as a significant advance in the mass production of this material. This one-atom-thick fabric of carbon uniquely combines extreme mechanical strength, exceptionally high electronic and thermal conductivities, impermeability to gases, as well as many other supreme properties, all of which make it highly attractive for numerous applications. Here we review recent progress in graphene research and in the development of production methods, and critically analyse the feasibility of various graphene applications.

7,987 citations

Journal ArticleDOI
TL;DR: The theoretical charge capacity for silicon nanowire battery electrodes is achieved and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.
Abstract: There is great interest in developing rechargeable lithium batteries with higher energy capacity and longer cycle life for applications in portable electronic devices, electric vehicles and implantable medical devices. Silicon is an attractive anode material for lithium batteries because it has a low discharge potential and the highest known theoretical charge capacity (4,200 mAh g(-1); ref. 2). Although this is more than ten times higher than existing graphite anodes and much larger than various nitride and oxide materials, silicon anodes have limited applications because silicon's volume changes by 400% upon insertion and extraction of lithium which results in pulverization and capacity fading. Here, we show that silicon nanowire battery electrodes circumvent these issues as they can accommodate large strain without pulverization, provide good electronic contact and conduction, and display short lithium insertion distances. We achieved the theoretical charge capacity for silicon anodes and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.

6,104 citations

Journal ArticleDOI
09 Mar 2001-Science
TL;DR: The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures, which could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides.
Abstract: Ultralong beltlike (or ribbonlike) nanostructures (so-called nanobelts) were successfully synthesized for semiconducting oxides of zinc, tin, indium, cadmium, and gallium by simply evaporating the desired commercial metal oxide powders at high temperatures. The as-synthesized oxide nanobelts are pure, structurally uniform, and single crystalline, and most of them are free from defects and dislocations. They have a rectanglelike cross section with typical widths of 30 to 300 nanometers, width-to-thickness ratios of 5 to 10, and lengths of up to a few millimeters. The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures. The nanobelts could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides and building functional devices along individual nanobelts.

5,677 citations

Journal ArticleDOI
TL;DR: The state of the art, future directions and open questions in Raman spectroscopy of graphene are reviewed, and essential physical processes whose importance has only recently been recognized are described.
Abstract: Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain, doping, disorder and functional groups. This, in turn, provides insight into all sp(2)-bonded carbon allotropes, because graphene is their fundamental building block. Here we review the state of the art, future directions and open questions in Raman spectroscopy of graphene. We describe essential physical processes whose importance has only recently been recognized, such as the various types of resonance at play, and the role of quantum interference. We update all basic concepts and notations, and propose a terminology that is able to describe any result in literature. We finally highlight the potential of Raman spectroscopy for layered materials other than graphene.

5,673 citations

Journal ArticleDOI
TL;DR: This paper presents a meta-analysis of the chiral stationary phase transition of Na6(CO3)(SO4)2, a major component of the response of the immune system to Na2CO3.
Abstract: Ju Mei,†,‡,∥ Nelson L. C. Leung,†,‡,∥ Ryan T. K. Kwok,†,‡ Jacky W. Y. Lam,†,‡ and Ben Zhong Tang*,†,‡,§ †HKUST-Shenzhen Research Institute, Hi-Tech Park, Nanshan, Shenzhen 518057, China ‡Department of Chemistry, HKUST Jockey Club Institute for Advanced Study, Institute of Molecular Functional Materials, Division of Biomedical Engineering, State Key Laboratory of Molecular Neuroscience, Division of Life Science, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China Guangdong Innovative Research Team, SCUT-HKUST Joint Research Laboratory, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

5,658 citations