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Shuit-Tong Lee

Researcher at Soochow University (Suzhou)

Publications -  1129
Citations -  84313

Shuit-Tong Lee is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Silicon & Nanowire. The author has an hindex of 138, co-authored 1121 publications receiving 77112 citations. Previous affiliations of Shuit-Tong Lee include University of British Columbia & Hong Kong University of Science and Technology.

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Copper hexadecafluorophthalocyanine and copper phthalocyanine as a pure organic connecting unit in blue tandem organic light-emitting devices

TL;DR: In this article, a non-oped organic system of copper hexadecafluorophthalocyanine (F16CuPc)∕copper phthalocynine (CuPC) has been investigated as a connecting unit for deep-blue electrofluorescent tandem organic light-emitting devices (OLEDs) based on 2-methyl-9,10-di(2-naphthyl) anthracene emission.
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Carbon Nanodot Surface Modifications Initiate Highly Efficient, Stable Catalysts for Both Oxygen Evolution and Reduction Reactions

TL;DR: In this paper, it was demonstrated that carbon nanodots surface-modified with either phosphorus or amidogen can respectively achieve electrocatalytic activity approaching that of the benchmark Pt/C and IrO2/C catalysts for ORR and OER.
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Recent progress in organic molecule/graphene interfaces

TL;DR: In this paper, the interfacial morphologies and electronic structures between organic molecules and graphene, prepared on different substrates, are reviewed and shown to exhibit two important characteristics: (1) formation of well-ordered organic layers based on the graphene template and (2) occurrence of charge transfer between adsorbed molecules and graphite.
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Tuning Electrical and Photoelectrical Properties of CdSe Nanowires via Indium Doping

TL;DR: Doping is an efficient approach to tune the electrical properties of semiconductors, and has been widely utilized in the semiconductor industry, and CdSe films and bulk crystals with tunable conductivity have been realized by using indium as n-type dopant.
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Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode

TL;DR: In this article, a vacuum-deposited light-emitting device which emits light from its top surface through an Al cathode using p-type doped silicon as the anode material is described.