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Author

Shunpei Yamazaki

Other affiliations: Nokia
Bio: Shunpei Yamazaki is an academic researcher from Schweitzer Engineering Laboratories. The author has contributed to research in topics: Layer (electronics) & Semiconductor device. The author has an hindex of 109, co-authored 3476 publications receiving 66579 citations. Previous affiliations of Shunpei Yamazaki include Nokia.


Papers
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Journal ArticleDOI
01 Jun 2009
TL;DR: This work designed, prototyped, and evaluated LCD integrated with a gate driver and a source driver using amorphous In‐Ga‐Zn‐Oxide TFTs having bottom‐gate bottom‐contact structure, thereby obtaining T FTs with superior characteristics.
Abstract: We designed, prototyped, and evaluated LCD integrated with a gate driver and a source driver using amorphous In-Ga-Zn-Oxide TFTs having bottom-gate bottom-contact structure, thereby obtaining TFTs with superior characteristics Then, we prototyped the world's first 4-inch QVGA LCD and integrated the gate driver and source driver on the display panel

984 citations

Proceedings ArticleDOI
05 Dec 2005
TL;DR: The development of the world's first flexible RFCPUs (8bit, passive type) by adding to the CPU an antenna, an analog circuit, an encryption function and an RFID function, which operate using an RF signal with a frequency of 13.56MHz.
Abstract: On the basis of the fabrication of a CPU on glass as a digital circuit presented in B Lee et al (2003) and T Ikeda et al (2004), as well as the fabrication of a flexible CPU using a TFT transfer technology presented in T Takayama et al (2004), we have succeeded in the development of the world's first flexible RFCPUs (8bit, passive type) by adding to the CPU an antenna, an analog circuit, an encryption function and an RFID function, which operate using an RF signal with a frequency of 1356MHz

979 citations

Journal ArticleDOI
TL;DR: A radio frequency integrated circuit (RFIC) tag consisting of an 8 bit CPU, a 4 kB ROM, a 512B SRAM, and an RF circuit, which communicates using 915 MHz UHF RF signals, has been developed on both a flexible substrate and a glass substrate.
Abstract: A radio frequency integrated circuit (RFIC) tag consisting of an 8 bit CPU, a 4 kB ROM, a 512B SRAM, and an RF circuit, which communicates using 915 MHz UHF RF signals, has been developed on both a flexible substrate and a glass substrate. Each of the RFIC tags employs a single DES and an anti-side channel attack routine in firmware for secured communication, and occupies an area of 10.5 mm in width and 8.9 mm in height. The RFIC tag on the flexible substrate is 145 mum thick and weighs 262 mg, and the RFIC tag on the glass substrate consumes 0.54 mW at a power supply voltage of 1.5 V and communicates with a maximum range of 43 cm at a power of 30 dBm. The high-performance poly-silicon TFT technology on flexible substrate and glass substrate of 0.8 mum design rule, and a gate plus one metal layer are used for fabrication. The RFIC tag realizes stable internal clock generation and distribution by a digital control clock generator and a two-phase nonoverlap clock scheme, respectively.

976 citations

Journal ArticleDOI
01 Jun 2009
TL;DR: In this article, inverted-staggered amorphous In-Ga-Zn-O (a-IGZO) TFTs were fabricated and measured temperature dependence of the TFT characteristics.
Abstract: We fabricated inverted-staggered amorphous In-Ga-Zn-O (a-IGZO) TFTs and measured temperature dependence of the TFT characteristics. A Vth shift between 120°C and 180°C was as large as about 4 V. In the analysis with 2-D numerical simulation, we could reproduce the measured result by assuming two kinds of donor-like states as carrier generation sources.

962 citations

Journal ArticleDOI
01 Jun 2009
TL;DR: In this paper, a 4.0 inch QVGA AMOLED display using amorphous In-Ga-Zn-Oxide TFTs, focusing on a passivation layer, was developed.
Abstract: We have developed a 4.0 inch QVGA AMOLED display using amorphous In-Ga-Zn-Oxide TFTs, focusing on a passivation layer. Threshold voltage of the TFTs can be controlled to have “normally off” characteristics by using SiOx with a low hydrogen content. Besides, small subthreshold swing and high saturation mobility are obtained.

949 citations


Cited by
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PatentDOI
06 Apr 2012-Science
TL;DR: In this article, the authors present stretchable and printable semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed, or otherwise deformed.
Abstract: The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

1,673 citations

Patent
18 May 2006
TL;DR: In this paper, a light-emitting device with the use of an amorphous oxide was presented, which has a lightemitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an Amorphous.
Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

1,551 citations

Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations

Patent
09 Jan 1997
TL;DR: In this article, a method and device are provided for controlling access to data, where portions of the data are protected and rules concerning access rights to data are determined, and a method is also provided for distributing data for subsequent controlled use of those data.
Abstract: A method and device are provided for controlling access to data. Portions of the data are protected and rules concerning access rights to the data are determined. Access to the protected portions of the data is prevented, other than in a non-useable form; and users are provided access to the data only in accordance with the rules as enforced by a mechanism protected by tamper detection. A method is also provided for distributing data for subsequent controlled use of those data. The method includes protecting portions of the data; preventing access to the protected portions of the data other than in a non-useable form; determining rules concerning access rights to the data; protecting the rules; and providing a package including: the protected portions of the data and the protected rules. A user is provided controlled access to the distributed data only in accordance with the rules as enforced by a mechanism protected by tamper protection. A device is provided for controlling access to data having protected data portions and rules concerning access rights to the data. The device includes means for storing the rules; and means for accessing the protected data portions only in accordance with the rules, whereby user access to the protected data portions is permitted only if the rules indicate that the user is allowed to access the portions of the data.

1,471 citations

Patent
13 Aug 2014
TL;DR: In this paper, the authors presented a heterocyclic compound and an organic light-emitting device including the HOC compound, which have high efficiency, low driving voltage, high luminance and long lifespan.
Abstract: The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

1,346 citations