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Shunya Sakane

Researcher at Osaka University

Publications -  16
Citations -  165

Shunya Sakane is an academic researcher from Osaka University. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 7, co-authored 13 publications receiving 131 citations.

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Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials

TL;DR: These results demonstrate an independent control of thermal and electrical conduction for phonon-glass electron-crystal TE materials by nanostructure designing and the energetic and structural interface control.
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Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures

TL;DR: In this article, the authors investigated carrier and phonon transports related to thermoelectric properties using absolutely-controlled Si nanostructures, namely Si films containing epitaxial nanodots (NDs).
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Anomalous enhancement of thermoelectric power factor by thermal management with resonant level effect

TL;DR: In this article, the authors proposed a thermal management with resonant level effect for simultaneous increase of electrical conductivity σ and Seebeck coefficient S Au crystals and Au impurities are introduced into SiGe, resulting in enhanced S and lowered thermal conductivity κ of SiGe.
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Fabrication of Carrier-Doped Si Nanoarchitecture for Thermoelectric Material by Ultrathin SiO2 Film Technique

TL;DR: In this paper, a carrier-doped Si nano-architecture for thermoelectric material is presented, consisting of a stacked structure of carrierdoped si layer/Si nanocrystals (NCs) with oriented crystal.
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Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

TL;DR: In this paper, the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus doping were investigated on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system.