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Shyh-Jer Huang

Bio: Shyh-Jer Huang is an academic researcher from National Cheng Kung University. The author has contributed to research in topics: Light-emitting diode & Epitaxy. The author has an hindex of 11, co-authored 35 publications receiving 243 citations. Previous affiliations of Shyh-Jer Huang include National Chiao Tung University & University of California, Los Angeles.

Papers
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Journal ArticleDOI
24 Oct 2017-ACS Nano
TL;DR: The experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated, and the negative differential resistance in the electrical characteristics is observed.
Abstract: High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2–MoS2 junctions as the conducting p–n channel is demonstrated. Both lateral n–p–n and p–n–p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional material...

41 citations

Journal ArticleDOI
TL;DR: In this paper, a transparent indium tin oxide (ITO)/SiO x /ITO structure was fabricated at room temperature and its resistive switching behaviors were investigated, and the average optical transmittance of the structure in the visible region was about 84%.

22 citations

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TL;DR: In this paper, the electron blocking layers (EBLs) of the ultraviolet light-emitting diode (LED) with conventional and specifically designed EBLs are investigated numerically and experimentally.
Abstract: The characteristics of the ultraviolet light-emitting diode (LED) with conventional and specifically designed electron blocking layers (EBLs) are investigated numerically and experimentally in this work. Simulation results show that delicately designed EBLs can not only capably perform the electron blocking function but also eliminate the incidental drawback of obstruction of hole injection caused by the nature of the large polarization field at the c-plane nitride heterojunction. It is shown that the polarization induced downward band bending can be mitigated when the portion of conventional EBL lying adjacent to the active region is replaced by a graduated AlGaN layer. The conduction band profile indicates that this replacement structure could have the capability of electron confinement similar to the conventional structure, and the valence band profile indicates that the spike induced by the polarization field is simultaneously eliminated, assisting the process of hole injection and distribution in the active region. Electron leakage over the EBL is thus obviously reduced, and the consumption efficiency of the injection carriers is improved, as expressed in the distribution of the electron current density. The experimental results show that the light output power can be significantly enhanced from 29.3 mW for the conventional device to 54.7 mW for the LED with the redesigned EBL structure.

18 citations

Journal ArticleDOI
TL;DR: In this paper, the authors presented a technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p -NiO x capping layer.

18 citations

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TL;DR: In this paper, the effect of B2O3 addition on the microwave dielectric properties and microstructure of Li2ZnTi3O8 ceramics prepared using conventional solid-state reaction was investigated for low-temperature co-fired ceramic (LTCC) applications.
Abstract: The effect of B2O3 addition on the microwave dielectric properties and microstructure of Li2ZnTi3O8 ceramics prepared using conventional solid-state reaction was investigated for low-temperature co-fired ceramic (LTCC) applications. X-ray diffraction and scanning electron microscopy were used to investigate the effect of B2O3 addition on the sintering process. The Li2ZnTi3O8 ceramic sintered at 875°C with 0.5 wt% B2O3 for 4 h showed good microwave dielectric properties including er = 25, Q × f = 50,917 GHz, and τf = −17.8 ppm/°C. Silver was found to be unreactive toward the 0.5 wt% B2O3 doped Li2ZnTi3O8 ceramic under the above sintering conditions.

18 citations


Cited by
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01 Mar 1997
TL;DR: In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.
Abstract: First‐principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal‐field splitting parameters ΔCF of −217, 42, and 41 meV, respectively, and spin–orbit splitting parameters Δ0 of 19, 13, and 1 meV, respectively. In the zinc blende structure ΔCF≡0 and Δ0 are 19, 15, and 6 meV, respectively. The unstrained AlN/GaN, GaN/InN, and AlN/InN valence band offsets for the wurtzite (zinc blende) materials are 0.81 (0.84), 0.48 (0.26), and 1.25 (1.04) eV, respectively. The trends in these spectroscopic quantities are discussed and recent experimental findings are analyzed in light of these predictions.

274 citations

Journal ArticleDOI
TL;DR: In this article, the authors review some emerging trends in the processing of wide band gap (WBG) semiconductor devices (e.g., diodes, MOSFETs, HEMTs, etc.).

242 citations

Journal ArticleDOI
TL;DR: In this article, the fabrication of ultraviolet photodetector on non-polar (11−20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1−102) sapphire substrate was reported.
Abstract: We report the fabrication of ultraviolet photodetector on non-polar (11–20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1–102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10−11 WHz−1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

162 citations

Journal ArticleDOI
TL;DR: In this paper, the most relevant technological issues for normally-off HEMTs with a p-GaN gate are discussed, including the operation principle and the impact of the heterostructure parameters.

156 citations

Journal ArticleDOI
TL;DR: In this article, a review of metal oxide based non-enzymatic glucose detection with a focus on electrochemical techniques is presented, followed by a discussion of future trends in developing advanced nonenzymatically glucose sensors.

137 citations