S
Simin Huang
Researcher at Shanghai University of Engineering Sciences
Publications - 6
Citations - 128
Simin Huang is an academic researcher from Shanghai University of Engineering Sciences. The author has contributed to research in topics: Catalysis & Electron transfer. The author has an hindex of 4, co-authored 6 publications receiving 27 citations.
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Journal ArticleDOI
Template-controlled in-situ growing of NiCo-MOF nanosheets on Ni foam with mixed linkers for high performance asymmetric supercapacitors
Xue-Rong Shi,Simin Huang,Xue-Rong Shi,Chunyan Sun,Xiangrui Zhang,Mengru Huang,Ruiqi Liu,Hui Wang,Shusheng Xu +8 more
TL;DR: In this paper, the asymmetric supercapacitor (ASC) was fabricated using NiCo-(PTA)0.8(BTC) 0.2 nanosheets and reduced graphene oxide (rGO) as the positive and negative electrodes.
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CO oxidation on Ni-based single-atom alloys surfaces
TL;DR: In this article, Van der Waals density functional theory (DFT) combined with micro-kinetic modeling is used to study CO oxidation on 12 M-Ni(111) SAAs and pure Ni (111) surfaces.
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The Application of Metal-Organic Frameworks and Their Derivatives for Supercapacitors.
TL;DR: The recent development of MOFs-based materials and their application in SCs as the electrode are reviewed and summarized and their outlook for the researches are given, which would be a valuable guideline for the rational design ofMOFs materials for SCs in the near future.
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Impact of linker functionalization on the adsorption of nitrogen-containing compounds in HKUST-1
TL;DR: Electronic properties including the Bader charges, electron density differences, and electron localization function were investigated to comprehend their adsorption behaviors and provide guidance for the proper functionalization of HKUST-1 with improved adsorptive properties for specific adsorbates.
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Atomic structures and electronic properties of Ni or N modified Cu/diamond interface.
TL;DR: The LPDOS reveals that all of the considered interfaces exhibit metallic character and the stability of the interface is found to be related to the type of formed interfacial boundary and bond, the interfacial bond populations, and the interf facial bond numbers.