Simona Donati Guerrieri

TL;DR: In this paper, a Doherty power amplifier for K-band point-to-point microwave radio, developed in TriQuint GaAs 0.15-μm PWR pHEMT monolithic technology, is presented.

TL;DR: In this paper, the authors presented an accurate and flexible approach to the self-consistent electrothermal modeling of III-N-based HEMTs, combining a temperature-dependent electrical compact model with a novel behavioral nonlinear dynamic thermal model, suitable for circuit-level simulations.

TL;DR: In this paper, a system theory approach is proposed for the modeling of colored noise sources in devices and circuits driven in large-signal (LS) conditions, and it is shown that only one modulation scheme (based on low-pass filtering followed by amplitude modulation) is consistent with the fundamental approach.

TL;DR: In this article, a review on physics-based noise simulation techniques for RF semiconductor devices, starting with the small-signal case but with greater stress on noise in large signal (quasi-periodic operation), is presented.

TL;DR: In this paper, a general framework for the modeling of semiconductor device variability through the physics-based analysis of the small-change sensitivity is presented, which is based on the linearization of the physicsbased device model around a nominal parameter.