S
Simone Pisana
Researcher at York University
Publications - 77
Citations - 10404
Simone Pisana is an academic researcher from York University. The author has contributed to research in topics: Graphene & Carbon nanotube. The author has an hindex of 27, co-authored 74 publications receiving 9769 citations. Previous affiliations of Simone Pisana include HGST & University of Toronto.
Papers
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Journal ArticleDOI
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Anindya Das,Simone Pisana,Biswanath Chakraborty,S. Piscanec,Srijan Kumar Saha,Umesh V. Waghmare,Kostya S. Novoselov,H. R. Krishnamurthy,Andre K. Geim,Andrea C. Ferrari,A. K. Sood +10 more
TL;DR: This work demonstrates a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported.
Journal ArticleDOI
Breakdown of the adiabatic Born-Oppenheimer approximation in graphene.
Simone Pisana,Michele Lazzeri,Cinzia Casiraghi,Kostya S. Novoselov,Andre K. Geim,Andrea C. Ferrari,Francesco Mauri +6 more
TL;DR: It is shown that ABO fails in graphene, a zero-bandgap semiconductor that becomes a metal if the Fermi energy is tuned applying a gate voltage, Vg, which induces a stiffening of the Raman G peak that cannot be described within ABO.
Journal ArticleDOI
Born-Oppenheimer breakdown in graphene
Simone Pisana,Michele Lazzeri,Cinzia Casiraghi,K. S. Novoselov,A. K. Geim,Andrea C. Ferrari,Francesco Mauri +6 more
TL;DR: The Born-Oppenheimer approximation (BO) has proven effective for the accurate determination of chemical reactions, molecular dynamics and phonon frequencies in a wide range of metallic systems as discussed by the authors.
Journal ArticleDOI
Raman Fingerprint of Charged Impurities in Graphene
TL;DR: In this article, strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage were reported, revealing the presence of excess charges even in the absence of intentional doping.
Journal ArticleDOI
Raman Fingerprint of Charged Impurities in Graphene
TL;DR: In this paper, strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage are reported, revealing the presence of excess charges, even in the absence of intentional doping.