This paper introduces McPAT, an integrated power, area, and timing modeling framework that supports comprehensive design space exploration for multicore and manycore processor configurations ranging from 90nm to 22nm and beyond. At the microarchitectural level, McPAT includes models for the fundamental components of a chip multiprocessor, including in-order and out-of-order processor cores, networks-on-chip, shared caches, integrated memory controllers, and multiple-domain clocking. At the circuit and technology levels, McPAT supports critical-path timing modeling, area modeling, and dynamic, short-circuit, and leakage power modeling for each of the device types forecast in the ITRS roadmap including bulk CMOS, SOI, and double-gate transistors. McPAT has a flexible XML interface to facilitate its use with many performance simulators. Combined with a performance simulator, McPAT enables architects to consistently quantify the cost of new ideas and assess tradeoffs of different architectures using new metrics like energy-delay-area2 product (EDA2P) and energy-delay-area product (EDAP). This paper explores the interconnect options of future manycore processors by varying the degree of clustering over generations of process technologies. Clustering will bring interesting tradeoffs between area and performance because the interconnects needed to group cores into clusters incur area overhead, but many applications can make good use of them due to synergies of cache sharing. Combining power, area, and timing results of McPAT with performance simulation of PARSEC benchmarks at the 22nm technology node for both common in-order and out-of-order manycore designs shows that when die cost is not taken into account clustering 8 cores together gives the best energy-delay product, whereas when cost is taken into account configuring clusters with 4 cores gives the best EDA2P and EDAP.

/pdf/mcpat-an-integrated-power-area-and-timing-modeling-framework-38b785sayc.pdf

McPAT: an integrated power, area, and timing modeling framework for multicore and manycore architectures

High leakage current in deep-submicrometer regimes is becoming a significant contributor to power dissipation of CMOS circuits as threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for estimation and reduction of leakage power, especially for low-power applications. This paper reviews various transistor intrinsic leakage mechanisms, including weak inversion, drain-induced barrier lowering, gate-induced drain leakage, and gate oxide tunneling. Channel engineering techniques including retrograde well and halo doping are explained as means to manage short-channel effects for continuous scaling of CMOS devices. Finally, the paper explores different circuit techniques to reduce the leakage power consumption.

Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits

Parameter variation in scaled technologies beyond 90nm will pose a major challenge for design of future high performance microprocessors. In this paper, we discuss process, voltage and temperature variations; and their impact on circuit and microarchitecture. Possible solutions to reduce the impact of parameter variations and to achieve higher frequency bins are also presented.

/pdf/parameter-variations-and-impact-on-circuits-and-k3j22hqcec.pdf

Parameter variations and impact on circuits and microarchitecture

As technology scales, variability in transistor performance continues to increase, making transistors less and less reliable. This creates several challenges in building reliable systems, from the unpredictability of delay to increasing leakage current. Finding solutions to these challenges require a concerted effort on the part of all the players in a system design. This article discusses these effects and proposes microarchitecture, circuit, and testing research that focuses on designing with many unreliable components (transistors) to yield reliable system designs.

Designing reliable systems from unreliable components: the challenges of transistor variability and degradation

This paper presents the many-core architecture, with hundreds to thousands of small cores, to deliver unprecedented compute performance in an affordable power envelope. We discuss fine grain power management, memory bandwidth, on die networks, and system resiliency for the many-core system.

http://www.ee.unlv.edu/~meiyang/ecg700/readings/Thousand%20Core%20Chips%20A%20Technology%20Perspective.pdf

Thousand core chips: a technology perspective

Bidirectional adaptive body bias (ABB) is used to compensate for die-to-die parameter variations by applying an optimum pMOS and nMOS body bias voltage to each die which maximizes the die frequency subject to a power constraint. Measurements on a 150 nm CMOS test chip which incorporates on-chip ABB, show that ABB reduces variation in die frequency by a factor of seven, while improving the die acceptance rate. An enhancement of this technique, that compensates for within-die parameter variations as well, increases the number of dies accepted in the highest frequency bin. ABB is therefore shown to provide bin split improvement in the presence of increasing process parameter variations.

Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

Measurements on a 150 nm CMOS test chip show that on-chip bidirectional adaptive body biasing compensates effectively for die-to-die parameter variation to meet both frequency and leakage requirements. An enhancement of this technique to correct for within-die variations triples the accepted die count in the highest frequency bin.

Die-to-Die and Within-Die Parameter Variations on Microprocessor Frequency and Leakage

Technology scaling demands a decrease in both V/sub dd/ and V/sub t/ to sustain historical delay reduction, while restraining active power dissipation. Scaling of V/sub t/ however leads to substantial increase in the sub-threshold leakage power and is expected to become a considerable constituent of the total dissipated power. It has been observed that the stacking of two off devices has smaller leakage current than one off device. In this paper we present a model that predicts the scaling nature of this leakage reduction effect. Device measurements are presented to prove the model's accuracy. Use of stack effect for leakage reduction and other implications of this effect are discussed.

/pdf/scaling-of-stack-effect-and-its-application-for-leakage-3mxo01imdv.pdf

Scaling of stack effect and its application for leakage reduction

A financial transaction system utilizes multi-factor authentication to secure financial transactions. The system comprises a portable transaction device (e.g. a wireless phone) which is used to program the magnetically or electronically reprogrammable stripe of a magnetic stripe card or the memory of a smart card. A single-use account number may be used to program the card. The device provides biometric authentication and secondary authentication using a secondary wireless device. The device and the programmed cards are used in various financial transactions.

Siva G. Narendra

Papers

Parameter variations and impact on circuits and microarchitecture

Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage

Die-to-Die and Within-Die Parameter Variations on Microprocessor Frequency and Leakage

Scaling of stack effect and its application for leakage reduction

System and method for securing financial transactions