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Somnath Ghosh

Researcher at Indian Institute of Technology, Jodhpur

Publications -  291
Citations -  3957

Somnath Ghosh is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Microstructured optical fiber & Optical fiber. The author has an hindex of 28, co-authored 287 publications receiving 3318 citations. Previous affiliations of Somnath Ghosh include University of Calcutta & Indian Institute of Science.

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Energy efficient medium access control with single sleep schedule for wireless sensor networks

TL;DR: The paper proposes a modification of the protocol to eliminate the need for some nodes in S-MAC to stay awake longer than the other nodes, and improves the energy efficiency and increases the life span of a wireless sensor network.
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Effect of Magnetic Quantization on the Diffusivity—Mobility Ratio in n-Cd3As2

TL;DR: In this article, the dependence of the diffusivity-mobility ratio on a quantizing magnetic field in degenerate n-Cd3As2 in the extreme quantum limit according to the Bodnar model is studied.
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HTTP(P2P): a transaction based (HTTP) peer-to-peer protocol for the dissemination of Web-objects in congested networks

TL;DR: The protocol HTTP(P2P) shows promise for increasing the maximum load of Web sites during times of high and very high Web site load and link contention and distributes the redirected traffic over the network to reduce secondary transient network congestion.
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Conversion Electron Mössbauer Study of Mixing Induced by Swift Heavy Ions at the Fe/Si Interface

TL;DR: In this article, conversion electron Mossbauer Spectroscopy (CEMS) was employed in order to study the mixing induced by swift Au and Ag ions at the Fe/Si interface in a Fe/Fe57/Si system, and an increase in the amount of mixing with ion fluence and electronic energy loss was observed.
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Effect of an electric field on size-quantized photoemission from nanometer films of semiconductors

TL;DR: In this article, the electric field-aided photoemission from quantum wells in ultrathin films of degenerate wide-gap semiconductors, taking n-type GaAs as an example, was investigated.