S
Somnath Mahato
Researcher at Polytechnic University of Catalonia
Publications - 26
Citations - 833
Somnath Mahato is an academic researcher from Polytechnic University of Catalonia. The author has contributed to research in topics: Perovskite (structure) & PEDOT:PSS. The author has an hindex of 10, co-authored 16 publications receiving 570 citations. Previous affiliations of Somnath Mahato include Indian Institute of Technology Dhanbad & Indian Institutes of Technology.
Papers
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Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells
Luis G. Gerling,Somnath Mahato,Anna Belen Morales-Vilches,Gerard Masmitja,Pablo Ortega,Cristobal Voz,Ramon Alcubilla,Joaquim Puigdollers +7 more
TL;DR: In this paper, a comparative study comprising three transition metal oxides, MoO3, WO3 and V2O5, acting as front p-type contacts for n-type crystalline silicon heterojunction solar cells was performed.
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Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications
TL;DR: In this paper, four transition metal oxides (V2O5, MoO3, WO3 and ReO3) were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells.
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Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode
TL;DR: In this article, the authors investigated the electronic properties of Au/V2O5/n-Si Schottky device by temperature dependent current-voltage (I-V) and capacitance voltage (C−V) measurements ranging from 300 K to 150 K. They found that the ideality factor increases and barrier height decreases with the decrease of temperature.
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Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer
TL;DR: In this paper, three transition metal oxides (TMO) are used as an interface layer between gold and silicon and the basic Schottky diode parameters such as ideality factor (n), barrier height ( ϕ b 0 ) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory.
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Near 5% DMSO is the best: A structural investigation of PEDOT: PSS thin films with strong emphasis on surface and interface for hybrid solar cell
Somnath Mahato,Somnath Mahato,Joaquim Puigdollers,Cristobal Voz,Mala Mukhopadhyay,Manabendra Mukherjee,Satyajit Hazra +6 more
TL;DR: In this article, the effect of DMSO doping on poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) thin films have been optimized for obtaining better hole transport layer in hybrid solar cell.