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Soni Prayogi

Other affiliations: Syiah Kuala University
Bio: Soni Prayogi is an academic researcher from Sepuluh Nopember Institute of Technology. The author has contributed to research in topics: Materials science & Amorphous silicon. The author has an hindex of 1, co-authored 5 publications receiving 4 citations. Previous affiliations of Soni Prayogi include Syiah Kuala University.

Papers
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Journal ArticleDOI
TL;DR: In this article, an intrinsic layer was added to the a-Si: H p-i-n solar cell structure to prevent sunlight energy from being absorbed by the second intrinsic layer, which greatly improved the conversion efficiency.
Abstract: In this study, we report for the first time that the addition of an intrinsic layer to the a-Si: H p–i–n solar cell structure greatly enhances the conversion efficiency. The a-Si: H p–i–n solar cells were grown using Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques on the Indium Tin Oxide (ITO) substrate and added an intrinsic layer with the p–i1–i2–n structure to prevent sunlight energy from being absorbed the first intrinsic layer can be absorbed by the second intrinsic layer. The a-Si: H p–i–n and p–i1–i2–n solar cells were characterized, including optical properties, electrical properties, surface morphology, thickness, and band gap using Ellipsometric Spectroscopy (ES). Furthermore, from the optical constant and thin film thickness, the reflectance and transmittance of each sample were obtained. The p–i–n and p–i1–i2–n samples show good transparency in the infrared region, and this transparency decreases in the visible light region and shows an interference pattern with a sharp decrease in the transmission at the absorption edge and the performance of solar cells (curve I–V) measured by the use of sun simulator and sunshine. Our results indicate that there is a very good improvement in the efficiency of solar cells a-Si: H p–i1–i2–n amounting to 8.86% from the original p–i–n structure of 5.61%.

4 citations

Journal ArticleDOI
TL;DR: In this paper, a p-type thin film of hydrogenated amporphous silicon (a-Si:H) has successfully been fabricated by radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) technique.
Abstract: A p-type thin film of hydrogenated amporphous silicon (a-Si:H) has successfully been fabricated by radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) technique. Substrate used in the deposition process is indium tin oxide (ITO) layer coated having size of 10 x10 cm2 and being cleaned with 97% alcohol using ultrasonic bath. According to Atomic Force Microscope (AFM) observation, the layer thickness of p-type a-Si: H film was 150 nm. The Transmission spectrum at room temperature obtained from UV-Vis measurement demonstrates a large period modulation, which is due to the interference within the film. At wavelength longer than 1000 nm (or energy <1 eV), the interference modulation in the transmission spectrum of the film is seen to broaden. It is shown in a zoomed - scale around the related band gap area that one may find an exciton structure.

3 citations


Cited by
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Journal ArticleDOI
TL;DR: In this article, an intrinsic layer was added to the a-Si: H p-i-n solar cell structure to prevent sunlight energy from being absorbed by the second intrinsic layer, which greatly improved the conversion efficiency.
Abstract: In this study, we report for the first time that the addition of an intrinsic layer to the a-Si: H p–i–n solar cell structure greatly enhances the conversion efficiency. The a-Si: H p–i–n solar cells were grown using Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques on the Indium Tin Oxide (ITO) substrate and added an intrinsic layer with the p–i1–i2–n structure to prevent sunlight energy from being absorbed the first intrinsic layer can be absorbed by the second intrinsic layer. The a-Si: H p–i–n and p–i1–i2–n solar cells were characterized, including optical properties, electrical properties, surface morphology, thickness, and band gap using Ellipsometric Spectroscopy (ES). Furthermore, from the optical constant and thin film thickness, the reflectance and transmittance of each sample were obtained. The p–i–n and p–i1–i2–n samples show good transparency in the infrared region, and this transparency decreases in the visible light region and shows an interference pattern with a sharp decrease in the transmission at the absorption edge and the performance of solar cells (curve I–V) measured by the use of sun simulator and sunshine. Our results indicate that there is a very good improvement in the efficiency of solar cells a-Si: H p–i1–i2–n amounting to 8.86% from the original p–i–n structure of 5.61%.

4 citations

Journal ArticleDOI
TL;DR: In this article , the front work function WFITO and absorber layer bandgap's influences on two solar cells structure performances were simulated using AFORS-HET (Automated FOR Simulation of Heterostructures) software, and the simulation results showed the Dint structure had a 10.76 % maximum efficiency (VOC = 969.8 mV, JSC = 16.03 mA/cm2, and FF = 70 %).
Abstract: Abstract In this study, the front work function WFITO and absorber layer bandgap’s influences on two solar cells structure performances, namely ITO/(p)a-Si:H/(i)a-Si:H/(n)a-Si:H/metal (single intrinsic, Sint) structure and ITO/(p)a-Si:H/(i1)a-Si:H/(i2)a-Si:H/(n)a-Si:H/metal (double intrinsic, Dint) structure, fabricated using RF-PECVD method were simulated, using AFORS-HET (Automated FOR Simulation of Heterostructures) software. Based on these simulations, the work functions (WFITO) value ought to range from 4.9 to 5.7 eV, in order to determine the optimum WFITO for high solar cell efficiency, confirmed with the J-V dark characteristic, the band diagram in thermodynamics equilibrium, build-in electric field distribution, trapped holes density, as well as the quantum efficiency. The simulation results showed the Dint structure’s external parameters (e.g., VOC,JSC, FF, Eff ) are higher, compared to the Sint structure. Furthermore, the absorber (i1 and i2) layers bandgap is optimized in an effort to improve the Dint solar cell’s performance. According to the results, the Dint structure had a 10.76 % maximum efficiency (VOC = 969.8 mV, JSC = 16.03 mA/cm2, and FF = 70 %), using WFITO, i1 layer bandgap, and i2 layer bandgap of 5.7 eV, 1.82 eV, and 1.86 eV, respectively.

3 citations

Journal ArticleDOI
TL;DR: In this paper , an implementation of engineering everywhere in physics worksheets based on the STEM approach with the aim of knowing the improvement of students' science process skills using Engineering Everywhere on physics workheets is presented.
Abstract: High school students (MAN 3) Banda Aceh are experiencing problems related to science process skills, so they need to be improved. Efforts to improve KPS can be pursued through "Implementation of Engineering Everywhere in Physics worksheets based on the STEM approach with the aim of knowing the improvement of students' science process skills using Engineering Everywhere on physics worksheets based on the STEM approach. The Pre-Experimental Design One Group Pretest-Postest research, research subjects for class XI MIA 2 students as many as 27 people. The instruments used consisted of test instruments (scientific process skills test questions), and non-tests (RPP, LKS, teacher observation sheets, and student response questionnaires). Data analysis techniques quantitatively and qualitatively as well as the calculation of the N-Gain Score. The results of qualitative data analysis obtained validity, practicality of the instruments used and quantitative data analysis obtained the effectiveness of the science process skills instrument with an N-gain result of 0.69, and was supported by the results of the student response questionnaire which scored 940 in the effective category

2 citations