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Soo-Seong Kim

Bio: Soo-Seong Kim is an academic researcher from Seoul National University. The author has contributed to research in topics: Insulated-gate bipolar transistor & Breakdown voltage. The author has an hindex of 7, co-authored 23 publications receiving 141 citations.

Papers
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Proceedings ArticleDOI
23 May 2005
TL;DR: In this paper, a lateral GaN SBD with floating metal rings (FMRs) was proposed for AlGaN/GaN hetero-junction employing a very high breakdown voltage, low leakage current and a low on-state voltage.
Abstract: We have reported a lateral GaN SBDs on AlGaN/GaN hetero-junction employing floating metal rings (FMRs) which exhibit a very high breakdown voltage, a low leakage current and a low on-state voltage. We have obtained a very high breakdown voltage of 930V without any additional process step. We have also optimized design parameters of FMR, such as the space between main junction and FMR and the number of rings. Our experimental results show that FMR which is rather simple may be suitable for lateral GaN SBD.

28 citations

Journal ArticleDOI
TL;DR: In this paper, the first measurement of the refractive index of the linear alkyl benzene (LAB)-based liquid scintillator and acrylic used at the Reactor Experiment for Neutrino Oscillation (RENO) was described.
Abstract: In this paper, we describe the first measurement of the refractive index of the linear alkyl benzene (LAB)-based liquid scintillator and acrylic used at the Reactor Experiment for Neutrino Oscillation (RENO). The refractive index of a material is an important optical property and the prism spectrometer is the most common device for measuring the refractive index. Using the minimum deviation technique, which requires an exact measurement of the apex angle, we determined the refractive indices at six different wavelengths and then fitted them. We also compared the refractive index of the LAB-based liquid scintillator with the refractive indices of other liquid scintillator solvents commonly used in reactor neutrino experiments.

25 citations

Proceedings ArticleDOI
12 Jun 2016
TL;DR: In this article, the superjunction NPT IGBT was integrated into IGBT to achieve a trade-off performance of 35ns with Vcesat of 1.9V and collector current density of 250A/cm2.
Abstract: 650V superjunction IGBTs have been fabricated. Depending on IGBT structures as well as process conditions, competitive trade-off performances have been observed. Vcesat of 1.4V and tf around 35 ns at the collector current density of 250A/cm2 were obtained with the prototype of superjunction FS IGBT. The superjunction NPT IGBT also shows tf of 35ns with Vcesat of 1.9V, which is superior to the conventional trench FS IGBT. Integrating the superjunction technology into IGBT, we demonstrated that the superjunction IGBT is a viable IGBT technology option as a next generation IGBT technology.

22 citations

Proceedings ArticleDOI
24 May 2004
TL;DR: In this paper, a vertical GaN Schottky barrier diode employing a floating metal ring as an edge termination is described and the breakdown voltage is larger than a device without any termination that has been fabricated on a bulk GaN substrate.
Abstract: A vertical GaN Schottky barrier diode (SBD) employing a floating metal ring as an edge termination is described. The breakdown voltage is larger than a device without any termination that has been fabricated on a bulk GaN substrate. Fabricated GaN SBD exhibits a high breakdown voltage of 353 V and very fast reverse recovery characteristics of 28 ns. The breakdown voltage of a device without termination is 159 V. It should be noted that the proposed device does not require any additional processes.

14 citations

Proceedings Article
01 Oct 2002
TL;DR: In this article, the authors have investigated the ESD (Electro-Static Discharge) properties of GGNMOS (grounded gate NMOS), which is fabricated via 0.35µm / 18V logic technology, employing TLP (Transmission Line Pulser) test.
Abstract: We have investigated ESD (Electro-Static Discharge) properties of GGNMOS (Grounded Gate NMOS), which is fabricated via 0.35µm / 18V logic technology, employing TLP (Transmission Line Pulser) test. Measurement results show that 18V GGNMOS exhibits the snap-back characteristics, which result in the high ESD immunity level of 9.5mA/µm in the single finger type and 5mA/µm in the multi-finger type. Good linear dependence on the width scaling is achieved both in the single finger type and in the multi-finger type GGNMOS. We have also simulated to investigate the ESD failure mechanism and effects of layout design parameters on the ESD immunity level of 18V GGNMOS. Simulation results show that the ESD failure mechanism in 18V GGNMOS is the low-temperature second breakdown induced by Kirk effect and the ESD immunity level is increased as XO and DCGS are increased. Experimental results show that 18V GGNMOS is robust to ESD stress, while DENMOS (Drain Extended NMOS) and LDMOS (Lateral double Diffused MOS) are vulnerable to ESD stress [2,3].

11 citations


Cited by
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Journal ArticleDOI
TL;DR: The superjunction concept is compared to other methods of enhancing the conductivity of power devices (from bipolar to employment of wide-bandgap materials) to derive its set of benefits and limitations.
Abstract: Superjunction has arguably been the most creative and important concept in the power device field since the introduction of the insulated gate bipolar transistor (IGBT) in the 1980s. It is the only concept known today that has challenged and ultimately proved wrong the well-known theoretical study on the limit of silicon in high-voltage devices. This paper deals with the history, device and process development, and the future prospects of Superjunction technologies. It covers fundamental physics, technological challenges as well as aspects of design and modeling of unipolar devices, such as CoolMOS. The superjunction concept is compared to other methods of enhancing the conductivity of power devices (from bipolar to employment of wide-bandgap materials) to derive its set of benefits and limitations. This paper closes with the application of the superjunction concept to other structures or materials, such as terminations, superjunction IGBTs, or silicon carbide Field Effect Transistors (FETs).

244 citations

Patent
Wataru Saito1, Ichiro Omura1
26 Oct 2011
TL;DR: In this article, a p-type gallium nitride (GaN) layer electrically connected to a source electrode and extending and projecting to a drain electrode side with respect to a gate electrode is formed.
Abstract: In a nitride semiconductor device according to one embodiment of the invention, a p-type gallium nitride (GaN) layer electrically connected to a source electrode and extending and projecting to a drain electrode side with respect to a gate electrode is formed on an undoped or n-type aluminum gallium nitride (AlGaN) layer serving as a barrier layer

172 citations

Journal ArticleDOI
TL;DR: In this article, a single-chip switch-mode boost converter that features a monolithically integrated lateral field effect rectifier (L-FER) and a normally off transistor switch was demonstrated.
Abstract: We demonstrate a single-chip switch-mode boost converter that features a monolithically integrated lateral field-effect rectifier (L-FER) and a normally off transistor switch. The circuit was fabricated on a standard AlGaN/GaN HEMT epitaxial wafer grown with GaN-on-Si technology. The fabricated rectifier with a drift length of 15 mum exhibits a breakdown voltage of 470 V, a turn-on voltage of 0.58 V, and a specific on-resistance of 2.04 mOmegaldrcm2. The L-FER exhibits no reverse recovery current associated with the turn-off transient because of its unipolar nature. A prototype of GaN-based boost converter that includes monolithically integrated rectifiers and transistors is demonstrated using conventional GaN-on-Si wafers for the first time to prove the feasibility of the GaN-based power IC technology.

157 citations

Journal ArticleDOI
TL;DR: In this paper, the authors presented AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates, achieving a low specific ON-resistance (5.12
Abstract: In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance $R_{{\rm ON, SP}}$ (5.12 $\text{m}\Omega \cdot \textrm {cm}^{2}$ ), a low turn-ON voltage ( 1.9 kV) were simultaneously achieved in devices with a 25- $\mu \text{m}$ anode/cathode distance, resulting in a power figure-of-merit BV $^{2}$ / $R_{{\rm ON, SP}}$ of 727 $\textrm {MW}\,\cdot \, \textrm {cm}^{-2}$ . The record high BV of 1.9 kV is attributed to the dual field-plate structure.

154 citations

01 Jan 2012
TL;DR: In this paper, the authors proposed a matrix of on-off switches to convert power from ac-to-dc (rectifier), dc-todc (chopper), dc to ac (inverter), and ac to ac at the same (ac controller) or different frequencies (cycloconverter).
Abstract: Power semiconductor devices constitute the heart of modern power electronic apparatus. They are used in power electronic converters in the form of a matrix of on-off switches, and help to convert power from ac-to-dc (rectifier), dc-to-dc (chopper), dc-to-ac (inverter), and ac-to-ac at the same (ac controller) or different frequencies (cycloconverter). The switching mode power conversion gives high efficiency, but the disadvantage is that due to the nonlinearity of switches, harmonics are generated at both the supply and load sides. The switches are not ideal, and they have conduction and turn-on and turn-off switching losses. Converters are widely used in applications such as heating and lighting controls, ac and dc power supplies, electrochemical processes, dc and ac motor drives, static VAR generation, active harmonic filtering, etc. Although the cost of power semiconductor devices in power electronic equipment may hardly exceed 20–30 percent, the total equipment cost and performance may be highly influenced by the characteristics of the devices. An engineer designing equipment must understand the devices and their characteristics thoroughly in order to design efficient, reliable, and cost-effective systems with optimum performance. It is interesting to note that the modern technology evolution in power electronics has generally followed the evolution of power semiconductor devices. The advancement of microelectronics has greatly contributed to the knowledge of power device materials, processing, fabrication, packaging, modeling, and simulation. Today’s power semiconductor devices are almost exclusively based on silicon material and can be classified as follows:

126 citations