S
Soo Young Choi
Researcher at Applied Materials
Publications - 146
Citations - 4565
Soo Young Choi is an academic researcher from Applied Materials. The author has contributed to research in topics: Layer (electronics) & Thin-film transistor. The author has an hindex of 27, co-authored 146 publications receiving 4528 citations.
Papers
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Patent
Plasma uniformity control by gas diffuser hole design
Soo Young Choi,John M. White,Qunhua Wang,Li Hou,Ki Woon Kim,Shinichi Kurita,Tae Kyung Won,Suhail Anwar,Beom Soo Park,Robin L. Tiner +9 more
TL;DR: In this paper, a gas diffuser plate for distributing gas in a processing chamber is described, which includes a diffuser with an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser.
Patent
Method of controlling the film properties of PECVD-deposited thin films
TL;DR: In this article, a combination of PECVD deposition process parameters was used to control surface standing wave effects which affect deposited film thickness uniformity and physical property uniformity, and a gas diffusion plate design was developed to assist in the control of plasma density to be symmetrical or asymmetrical over a substrate surface during film deposition.
Patent
Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
TL;DR: In this article, an embodiment of a gas distribution plate with a plurality of gas passages passing between an upstream side and a downstream side of a diffuser plate is presented. But the diffuser has a diameter less than the respective diameters of the first and second holes.
Patent
Plasma uniformity control by gas diffuser curvature
TL;DR: In this paper, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages.
Patent
Diffuser plate with slit valve compensation
Soo Young Choi,John M. White +1 more
TL;DR: In this paper, the shape and size of the hollow cathode cavities closest to the slit valve are adjusted to compensate for the proximity of the cathode to a slit valve.