Sören Dhoore

Bio: Sören Dhoore is an academic researcher from Ghent University. The author has contributed to research in topics: Laser & Silicon photonics. The author has an hindex of 8, co-authored 18 publications receiving 386 citations. Previous affiliations of Sören Dhoore include Katholieke Universiteit Leuven.

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

Abstract: The high index contrast silicon-on-insulator platform is the dominant CMOS compatible platform for photonic integration. The successful use of silicon photonic chips in optical communication applications has now paved the way for new areas where photonic chips can be applied. It is already emerging as a competing technology for sensing and spectroscopic applications. This increasing range of applications for silicon photonics instigates an interest in exploring new materials, as silicon-on-insulator has some drawbacks for these emerging applications, e.g., silicon is not transparent in the visible wavelength range. Silicon nitride is an alternate material platform. It has moderately high index contrast, and like silicon-on-insulator, it uses CMOS processes to manufacture photonic integrated circuits. In this paper, the advantages and challenges associated with these two material platforms are discussed. The case of dispersive spectrometers, which are widely used in various silicon photonic applications, is presented for these two material platforms.

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

Abstract: In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm.

Novel adiabatic tapered couplers for active III-V/SOI devices fabricated through transfer printing

Abstract: We present the design of two novel adiabatic tapered coupling structures that allow efficient and alignment tolerant mode conversion between a III-V membrane waveguide and a single-mode SOI waveguide in active heterogeneously integrated devices. Both proposed couplers employ a broad intermediate waveguide to facilitate highly alignment tolerant coupling. This robustness is needed to comply with the current misalignment tolerance requirements for high-throughput transfer printing. The proposed coupling structures are expected to pave the way for transfer-printing-based heterogeneous integration of active III-V devices such as semiconductor optical amplifiers (SOAs), photodetectors, electro-absorption modulators (EAMs) and single wavelength lasers on silicon photonic integrated circuits.

Unidirectional, widely-tunable and narrow-linewidth heterogeneously integrated III-V-on-silicon laser

Abstract: A heterogeneously integrated widely tunable III-V-on-silicon ring laser with unidirectional operation is demonstrated. 40 nm tuning range (from 1560 nm to 1600 nm) is obtained using the Vernier effect between two ring resonators incorporated in the ring laser cavity. Unidirectional operation is obtained by integrating a DBR reflector coupling the clockwise and counterclockwise mode of the ring laser cavity. Unidirectional operation is obtained over the entire tuning range with about 10 dB suppression of the clockwise mode. The laser linewidth is lower than 1 MHz over the entire tuning range, down to 550 kHz in the optimum operation point. The waveguide-coupled output power is above 0 dBm over the entire tuning range.

Supercontinuum generation, photonic crystal fiber

Abstract: A topical review of numerical and experimental studies of supercontinuum generation in photonic crystal fiber is presented over the full range of experimentally reported parameters, from the femtosecond to the continuous-wave regime. Results from numerical simulations are used to discuss the temporal and spectral characteristics of the supercontinuum, and to interpret the physics of the underlying spectral broadening processes. Particular attention is given to the case of supercontinuum generation seeded by femtosecond pulses in the anomalous group velocity dispersion regime of photonic crystal fiber, where the processes of soliton fission, stimulated Raman scattering, and dispersive wave generation are reviewed in detail. The corresponding intensity and phase stability properties of the supercontinuum spectra generated under different conditions are also discussed.

Silicon Photonics Circuit Design: Methods, Tools and Challenges

Abstract: Silicon Photonics technology is rapidly maturing as a platform for larger-scale photonic circuits. As a result, the associated design methodologies are also evolving from componentoriented design to a more circuit-oriented design flow, that makes abstraction from the very detailed geometry and enables design on a larger scale. In this paper, we review the state of this emerging photonic circuit design flow and its synergies with electronic design automation (EDA). We cover the design flow from schematic capture, circuit simulation, layout and verification. We discuss the similarities and the differences between photonic and electronic design, and the challenges and opportunities that present themselves in the new photonic design landscape, such as variability analysis, photonic-electronic co-simulation and compact model definition. Silicon Photonics Circuit Design: Methods, Tools and

Review of Silicon Photonics Technology and Platform Development

Abstract: Many breakthroughs in the laboratories often do not bridge the gap between research and commercialization. However, silicon photonics bucked the trend, with industry observers estimating the commercial market to close in on a billion dollars in 2020 [45] . Silicon photonics leverages the billions of dollars and decades of research poured into silicon semiconductor device processing to enable high yield, robust processing, and most of all, low cost. Silicon is also a good optical material, with transparency in the commercially important infrared wavelength bands, and is a suitable platform for large-scale photonic integrated circuits. Silicon photonics is therefore slated to address the world's ever-increasing needs for bandwidth. It is part of an emerging ecosystem which includes designers, foundries, and integrators. In this paper, we review most of the foundries that presently enable silicon photonics integrated circuits fabrication. Some of these are pilot lines of major research institutes, and others are fully commercial pure-play foundries. Since silicon photonics has been commercially active for some years, foundries have released process design kits (PDK) that contain a standard device library. These libraries represent optimized and well-tested photonic elements, whose performance reflects the stability and maturity of the integration platforms. We will document the early works in silicon photonics, as well as its commercial status. We will provide a comprehensive review of the development of silicon photonics and the foundry services which enable the productization, including various efforts to develop and release PDK devices. In this context, we will report the long-standing efforts and contributions that previously IME/A*STAR and now AMF has dedicated to accelerating this journey.

Silicon Photonic Biosensors Using Label-Free Detection.

Abstract: Thanks to advanced semiconductor microfabrication technology, chip-scale integration and miniaturization of lab-on-a-chip components, silicon-based optical biosensors have made significant progress for the purpose of point-of-care diagnosis In this review, we provide an overview of the state-of-the-art in evanescent field biosensing technologies including interferometer, microcavity, photonic crystal, and Bragg grating waveguide-based sensors Their sensing mechanisms and sensor performances, as well as real biomarkers for label-free detection, are exhibited and compared We also review the development of chip-level integration for lab-on-a-chip photonic sensing platforms, which consist of the optical sensing device, flow delivery system, optical input and readout equipment At last, some advanced system-level complementary metal-oxide semiconductor (CMOS) chip packaging examples are presented, indicating the commercialization potential for the low cost, high yield, portable biosensing platform leveraging CMOS processes

Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom

Abstract: Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10$^{-3}$. It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for grapheme-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications.