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Spyros Diplas

Researcher at SINTEF

Publications -  87
Citations -  1740

Spyros Diplas is an academic researcher from SINTEF. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Thin film. The author has an hindex of 20, co-authored 82 publications receiving 1410 citations. Previous affiliations of Spyros Diplas include University of Surrey & University of Oslo.

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XPS characterisation of in situ treated lanthanum oxide and hydroxide using tailored charge referencing and peak fitting procedures

TL;DR: In this article, a technique is described for deposition of gold nanoparticles under vacuum, enabling consistent energy referencing of X-ray photoelectron spectra obtained from lanthanum hydroxide La(OH)3 and in situ treated Lanthanum oxide La2O3 powders.
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Corrosion of stainless steel 316L in simulated formation water environment with CO2–H2S–Cl−

TL;DR: A synergistic effect of high concentration of chloride and H 2 S on oxide formation and metal dissolution has been studied on 316L stainless steel by electrochemical measurements, inductive coupled plasma (ICP) and X-ray photoelectron spectroscopy (XPS) as mentioned in this paper.
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Covalent attachment of a bioactive hyperbranched polymeric layer to titanium surface for the biomimetic growth of calcium phosphates

TL;DR: A whole new methodology was developed based on covalently attaching a hyperbranched poly(ethylene imine) layer on Ti surface able to promote calcium phosphate formation in a next deposition stage to confirm the successful grafting of the hybrid layer.
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Elemental distribution and oxygen deficiency of magnetron sputtered ITO films

TL;DR: The atomic structure and composition of noninterfacial ITO and ITO-Si interfaces were studied with Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS) as discussed by the authors.
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Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films

TL;DR: In this paper, the atomic structure and composition of noninterfacial ITO and ITO-Si interfaces were studied with transmission electron microscopy and x-ray photoelectron spectroscopy (XPS).