An introduction to heat transfer

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Yttrium aluminum garnet (YAG) doped with Ce3+ is the phosphor of choice for the conversion of blue to yellow light in the rapidly expanding market of white light LEDs, but it is generally thought to suffer from a low luminescence quenching temperature The luminescence quenching temperature is an important parameter, especially in high-power LEDs, but surprisingly no systematic research has been done to measure and understand the temperature quenching of the yellow Ce luminescence in YAG:Ce Here we report on the luminescence temperature quenching in YAG:Ce For a wide range of Ce concentrations (between 0033% and 33%) the temperature dependence of the emission intensity and the luminescence lifetimes are reported The intrinsic quenching temperature of the Ce luminescence is shown to be very high (>700 K) The lower quenching temperatures reported in the literature are explained by thermally activated concentration quenching (for highly doped systems) and the temperature dependence of the oscillator st

Temperature Quenching of Yellow Ce3+ Luminescence in YAG:Ce

A lighting device comprising first and second groups of solid state light emitters, which emit light having peak wavelength in ranges of from 430 nm to 480 nm, and first and second groups of lumiphors which emit light having dominant wavelength in the range of from 555 nm to 585 nm. In some embodiments, if current is supplied to a power line, a combination of (1) light exiting the lighting device which was emitted by the first group of emitters, and (2) light exiting the lighting device which was emitted by the first group of lumiphors would have a correlated color temperature which differs by at least 50 K from a correlated color temperature which would be emitted by a combination of (3) light exiting the lighting device which was emitted by the second group of emitters, and (4) light exiting the lighting device which was emitted by the second group of lumiphors.

Lighting device and lighting method

Light emitting diodes reliability review

Surface mount light emitting diode (LED) packages each contain a light emitting diode (LED) die (24). A plurality of arrays of openings are drilled into an electrically insulating sub-mount wafer (10). A metal is applied to the drilled openings to produce a plurality of via arrays (12). The LED dice (24) are flip-chip bonded onto a frontside (16) of the sub-mount wafer (10). The p-type and n-type contacts of each flip-chip bonded LED (24) electrically communicate with a solderable backside (18) of the sub-mount wafer (10) through a via array (12). A thermal conduction path (10, 12) is provided for thermally conducting heat from the flip-chip bonded LED dice (24) to the solderable backside (18) of the sub­mount wafer (10). Subsequent to the flip-chip bonding, the sub-mount wafer (10) is separated to produce the surface mount LED packages.

Led power package

A flexible interconnect structure (10) allows for rapid dissipation of heat generated from an electrical device that includes light-emitting elements (300), such as light-emitting diodes ('LEDs') and/or laser diodes. The flexible interconnect structure (10) comprises: (1) at least one flexible dielectric film (20) on which circuit traces (40) and, optionally, electrical circuit components (30, 32, 34, 36, 38) are formed and at least a portion of which is removed through its thickness; and (2) at least a heat sink (100) attached to one surface of the flexible dielectric film (20) opposite to the surface on which circuit traces (40) are formed. The flexible interconnect structure can include a plurality of such flexible dielectric films (20), each supporting circuit traces (40) and/or circuit components (30, 32, 34, 36, 38) and each being attached to another by an electrically insulating layer (70). Electrical devices or light sources having complex shapes are formed from such flexible interconnect structures and light-emitting elements (300) attached to the heat sinks (100) so to be in thermal contact therewith.

Flexible interconnect structures for electrical devices and light sources incorporating the same

Light emitting diodes, LEDs, historically have been used for indicators and produced low amounts of heat. The introduction of high brightness LEDs with white light and monochromatic colors have led to a movement towards general illumination. The increased electrical currents used to drive the LEDs have focused more attention on the thermal paths in the developments of LED power packaging. The luminous efficiency of LEDs is soon expected to reach over 80 lumens/W, this is approximately 6 times the efficiency of a conventional incandescent tungsten bulb. Thermal management for the solid-state lighting applications is a key design parameter for both package and system level. Package and system level thermal management is discussed in separate sections. Effect of chip packages on junction to board thermal resistance was compared for both SiC and Sapphire chips. The higher thermal conductivity of the SiC chip provided about 2 times better thermal performance than the latter, while the under-filled Sapphire chip package can only catch the SiC chip performance. Later, system level thermal management was studied based on established numerical models for a conceptual solid-state lighting system. A conceptual LED illumination system was chosen and CFD models were created to determine the availability and limitations of passive air-cooling.

Thermal management of LEDs: package to system

Thermal management of LEDs: Package to system

An LED device including an LED chip and a lens positioned apart from the chip and coated with a uniform thickness layer of fluorescent phosphor for converting at least some of the radiation emitted by the chip into visible light. Positioning the phosphor layer away from the LED improves the efficiency of the device and produces more consistent color rendition. The surface area of the lens is preferably at least ten times the surface area of the LED chip. For increased efficiency, the reflector and submount can also be coated with phosphor to further reduce internal absorption.

Stanton Earl Weaver

Papers

Led power package

Flexible interconnect structures for electrical devices and light sources incorporating the same

Thermal management of LEDs: package to system

Thermal management of LEDs: Package to system

Coated led with improved efficiency