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Stefan E. Schulz

Bio: Stefan E. Schulz is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Carbon nanotube & Low-k dielectric. The author has an hindex of 22, co-authored 235 publications receiving 2144 citations. Previous affiliations of Stefan E. Schulz include Helmholtz-Zentrum Dresden-Rossendorf & Chemnitz University of Technology.


Papers
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Journal ArticleDOI
26 Oct 2012
TL;DR: In this paper, the influence of the sonication power and time on the dispersion of single-walled carbon nanotubes (SWCNTs) is investigated. And the diameter and length of SWCNT are investigated using atomic force microscopy (AFM).
Abstract: Non-covalent functionalization based on surfactants has become one of the most common methods for dispersing of single-walled carbon nanotubes (SWCNTs). Previously, efforts have mainly been focused on experimenting with different surfactant systems, varying their concentrations and solvents. However sonication plays a very important role during the surfactant-based dispersion process for SWCNTs. The sonication treatment enables the surfactant molecules to adsorb onto the surface of SWCNTs by overcoming the interactions induced by the hydrophobic, electrostatic and van der Waals forces. This work describes a systematic study of the influence of the sonication power and time on the dispersion of SWCNTs. UV–vis-NIR absorption spectra is used to analyze and to evaluate the dispersion of SWCNTs in an aqueous solution of 1 w/v% sodium deoxycholate (DOC) showing that the resonant and nonresonant background absorption strongly depends on the sonication conditions. Furthermore, the diameter and length of SWCNTs under different sonication parameters are investigated using atomic force microscopy (AFM).

106 citations

Journal ArticleDOI
TL;DR: In this article, the thermal atomic layer deposition (ALD) of copper oxide films from the nonfluorinated yet liquid precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate, [( n Bu 3 P) 2 Cu(acac)], and wet O 2 on Ta, TaN, Ru, and SiO 2 substrates at temperatures of < 160°C is reported.
Abstract: The thermal atomic layer deposition (ALD) of copper oxide films from the nonfluorinated yet liquid precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate, [( n Bu 3 P) 2 Cu(acac)], and wet O 2 on Ta, TaN, Ru, and SiO 2 substrates at temperatures of < 160°C is reported. Typical temperature-independent growth was observed at least up to 125°C with a growth-per-cycle of ∼0. A for the metallic substrates and an ALD window extending down to 100°C for Ru. On SiO 2 and TaN, the ALD window was observed between 110 and 125°C, with saturated growth shown on TaN still at 135°C. Precursor self-decomposition in a chemical vapor deposition mode led to bimodal growth on Ta, resulting in the parallel formation of continuous films and isolated clusters. This effect was not observed on TaN up to ∼130°C and neither on Ru or SiO 2 for any processing temperature. The degree of nitridation of the tantalum nitride underlayers considerably influenced the film growth. With excellent adhesion of the ALD films on all substrates studied, the results are a promising basis for Cu seed layer ALD applicable to electrochemical Cu metallization in interconnects of ultralarge-scale integrated circuits.

80 citations

Journal ArticleDOI
TL;DR: Two types of copper seed layers deposited by MOCVD and long throw sputtering onto a tantalum barrier layer were used for electroplating (EP) of copper in the forward pulsed mode as mentioned in this paper.

78 citations

Journal ArticleDOI
TL;DR: A range of mesoporous xerogel low-k dielectric films were prepared and characterised using complementary techniques: Laser-generated surface acoustic waves, ellipsometric porosimetry, Rutherford backscattering and nanoindentation as mentioned in this paper.

77 citations

Journal ArticleDOI
TL;DR: In this article, the 3ω measurement technique was used to determine the thermal conductivity of thin thin dielectric materials using special test structure fabrication, and the results showed that the thermal performance of the porous low-k dielectrics obtained is only between 7 and 13% of that of thermally grown silicon dioxide.

74 citations


Cited by
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01 May 1993
TL;DR: Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems.
Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

29,323 citations

Journal ArticleDOI
TL;DR: In this paper, a review of porosity in on-chip wires can be found, with an attempt to give an overview of the classification, the character, and the characteristics of the porosity.
Abstract: The ever increasing requirements for electrical performance of on-chip wiring has driven three major technological advances in recent years. First, copper has replaced Aluminum as the new interconnect metal of choice, forcing also the introduction of damascene processing. Second, alternatives for SiO2 with a lower dielectric constant are being developed and introduced in main stream processing. The many new resulting materials needs to be classified in terms of their materials characteristics, evaluated in terms of their properties, and tested for process compatibility. Third, in an attempt to lower the dielectric constant even more, porosity is being introduced into these new materials. The study of processes such as plasma interactions and swelling in liquid media now becomes critical. Furthermore, pore sealing and the deposition of a thin continuous copper diffusion barrier on a porous dielectric are of prime importance. This review is an attempt to give an overview of the classification, the character...

1,496 citations

01 Jan 2016
TL;DR: The electronic transport in mesoscopic systems is universally compatible with any devices to read, and is available in the book collection an online access to it is set as public so you can get it instantly.
Abstract: Thank you very much for reading electronic transport in mesoscopic systems. Maybe you have knowledge that, people have look numerous times for their favorite readings like this electronic transport in mesoscopic systems, but end up in harmful downloads. Rather than reading a good book with a cup of tea in the afternoon, instead they juggled with some harmful bugs inside their computer. electronic transport in mesoscopic systems is available in our book collection an online access to it is set as public so you can get it instantly. Our book servers spans in multiple locations, allowing you to get the most less latency time to download any of our books like this one. Merely said, the electronic transport in mesoscopic systems is universally compatible with any devices to read.

1,220 citations

Journal ArticleDOI
TL;DR: Puurunen et al. as discussed by the authors summarized the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD.
Abstract: Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

1,160 citations