Stefan Paetel

Bio: Stefan Paetel is an academic researcher. The author has contributed to research in topics: Copper indium gallium selenide solar cells & Materials science. The author has an hindex of 14, co-authored 30 publications receiving 2678 citations.

New world record efficiency for Cu(In,Ga)Se2 thin‐film solar cells beyond 20%

Abstract: In this contribution, we present a new certified world record efficiency of 20.1 and 20.3% for Cu(In,Ga)Se2 thin-film solar cells. We analyse the characteristics of solar cells on such a performance level and demonstrate a high degree of reproducibility. Copyright © 2011 John Wiley & Sons, Ltd.

Thin‐film solar cells exceeding 22% solar cell efficiency: An overview on CdTe-, Cu(In,Ga)Se2-, and perovskite-based materials

Abstract: Already, several technologies of polycrystalline thin‐film photovoltaic materials have achieved certified record small‐cell power conversion efficiencies exceeding 22%. They are CdTe, Cu(In,Ga)(S,Se)2 (CIGS), and metal halide perovskite (PSC), each named after the light-absorbing semiconductor material. Thin-film solar cells and modules require very little active material due to their very high absorption coefficient. Efficient production methods with low materials waste, moderate temperatures, attractive cost structures, and favorable energy payback times will play a strong role in market development as thin-film technologies reach full maturity, including mass production and the standardization of production machineries. In fact, the first two technologies have already been developed up to the industrial scale with a market share of several GW. In this review article, we outline similarities and differences between these high‐efficiency thin‐film technologies from both the materials and the industrial point of view. We address the materials characteristics and device concepts for each technology, including a description of recent developments that have led to very high efficiency achievements. We provide an overview of the CIGS industry players and their current status. The newcomer PSC has demonstrated its potential in the laboratory, and initial efforts in industrial production are underway. A large number of laboratories are experimenting through a wide range of options in order to optimize not only the efficiency but also stability, environmental aspects, and manufacturability of PSC. Its high efficiency and its high bandgap make PSC particularly attractive for tandem applications. An overview of all these topics is included here along with a list of materials configurations.

Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells

Abstract: The gallium gradient in Cu(In,Ga)Se2 (CIGS) layers, which forms during the two industrially relevant deposition routes, the sequential and co-evaporation processes, plays a key role in the device performance of CIGS thin-film modules. In this contribution, we present a comprehensive study on the formation, nature, and consequences of gallium gradients in CIGS solar cells. The formation of gallium gradients is analyzed in real time during a rapid selenization process by in situ X-ray measurements. In addition, the gallium grading of a CIGS layer grown with an in-line co-evaporation process is analyzed by means of depth profiling with mass spectrometry. This gallium gradient of a real solar cell served as input data for device simulations. Depth-dependent occurrence of lateral inhomogeneities on the µm scale in CIGS deposited by the co-evaporation process was investigated by highly spatially resolved luminescence measurements on etched CIGS samples, which revealed a dependence of the optical bandgap, the quasi-Fermi level splitting, transition levels, and the vertical gallium gradient. Transmission electron microscopy analyses of CIGS cross-sections point to a difference in gallium content in the near surface region of neighboring grains. Migration barriers for a copper-vacancy-mediated indium and gallium diffusion in CuInSe2 and CuGaSe2 were calculated using density functional theory. The migration barrier for the InCu antisite in CuGaSe2 is significantly lower compared with the GaCu antisite in CuInSe2, which is in accordance with the experimentally observed Ga gradients in CIGS layers grown by co-evaporation and selenization processes. Copyright © 2014 John Wiley & Sons, Ltd.

New reaction kinetics for a high‐rate chemical bath deposition of the Zn(S,O) buffer layer for Cu(In,Ga)Se2‐based solar cells

Abstract: We report on a new chemical bath deposition kinetics for the zinc sulfide oxide Zn(S,O) buffer layer as used in Cu(In,Ga)Se2 (CIGS)-based solar cells. The new approach allows at high rates a better control of the growth kinetics, the step coverage on the rough CIGS surface, and the [S]/([S]+[O]) ratio in the film. Layer thicknesses as needed for buffer layer applications can be grown at moderate temperatures of 60–80 °C within 5–8 min. Applying this high-rate Zn(S,O) buffer in CIGS/Zn(S,O)/(Zn,Mg)O/ZnO:Al devices, we realized highly efficient small area solar cells, 30 × 30 cm2 submodules, and 60 × 120 cm2 full-size modules. Copyright © 2012 John Wiley & Sons, Ltd.

Solar Cell Efficiency Tables (Version 45)

Abstract: Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2014 are reviewed. URI: http://onlinelibrary.wiley.com/doi/10.1002/pip.2573/pdf [1] Authors: GREEN Martin A. EMERY Keith HISHIKAWA Y. WARTA W. DUNLOP Ewan Publication Year: 2015 Type: Articles in Journals

Effects of heavy alkali elements in Cu(In,Ga)Se2 solar cells with efficiencies up to 22.6%

Abstract: We report on the use and effect of the alkali elements rubidium and caesium in the place of sodium and potassium in the alkali post deposition treatment (PDT) as applied to Cu(In,Ga)Se2 (CIGS) solar cell absorbers. In order to study the effects of the different alkali elements, we have produced a large number of CIGS solar cells with high efficiencies resulting in a good experimental resolution to detect even small differences in performance. We examine the electrical device parameters of these fully functional devices and observe a positive trend in the I –V parameters when moving from devices without PDT to KF-, RbF-, and eventually to CsF-PDT. A diode analysis reveals an improved diode quality for cells treat-ed with heavier alkalis. Furthermore, secondary ion mass spectrometry (SIMS) measurements reveal a competitive mechanism induced within the class of alkali elements in the CIGS absorber induced by the alkali post deposition treatment. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells

Abstract: Thin-film photovoltaic devices based on chalcopyrite Cu(In,Ga)Se2 (CIGS) absorber layers show excellent light-to-power conversion efficiencies exceeding 20%. This high performance level requires a small amount of alkaline metals incorporated into the CIGS layer, naturally provided by soda lime glass substrates used for processing of champion devices. The use of flexible substrates requires distinct incorporation of the alkaline metals, and so far mainly Na was believed to be the most favourable element, whereas other alkaline metals have resulted in significantly inferior device performance. Here we present a new sequential post-deposition treatment of the CIGS layer with sodium and potassium fluoride that enables fabrication of flexible photovoltaic devices with a remarkable conversion efficiency due to modified interface properties and mitigation of optical losses in the CdS buffer layer. The described treatment leads to a significant depletion of Cu and Ga concentrations in the CIGS near-surface region and enables a significant thickness reduction of the CdS buffer layer without the commonly observed losses in photovoltaic parameters. Ion exchange processes, well known in other research areas, are proposed as underlying mechanisms responsible for the changes in chemical composition of the deposited CIGS layer and interface properties of the heterojunction.