S
Stefan Slesazeck
Researcher at Dresden University of Technology
Publications - 231
Citations - 8234
Stefan Slesazeck is an academic researcher from Dresden University of Technology. The author has contributed to research in topics: Ferroelectricity & Non-volatile memory. The author has an hindex of 35, co-authored 199 publications receiving 4934 citations. Previous affiliations of Stefan Slesazeck include Qimonda & Infineon Technologies.
Papers
More filters
Journal ArticleDOI
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors
Milan Pešić,Franz P. G. Fengler,Luca Larcher,Andrea Padovani,Tony Schenk,Everett D. Grimley,Xiahan Sang,James M. LeBeau,Stefan Slesazeck,Uwe Schroeder,Thomas Mikolajick +10 more
TL;DR: In this paper, the authors identify the root cause for the increase of the remnant polarization during the wake-up phase and subsequent polarization degradation with further cycling of a hafnium oxide-based ferroelectric random access memory (FeRAM).
Journal ArticleDOI
Reconfigurable Silicon Nanowire Transistors
TL;DR: This novel nanotransistor technology makes way for a simple and compact hardware platform that can be flexibly reconfigured during operation to perform different logic computations yielding unprecedented circuit design flexibility.
Proceedings ArticleDOI
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
Stefan Dunkel,M. Trentzsch,Ralf Richter,P. Moll,C. Fuchs,O. Gehring,M. Majer,S. Wittek,B. Muller,Thomas Melde,Halid Mulaosmanovic,Stefan Slesazeck,Stefan Müller,J. Ocker,M. Noack,D. A. Lohr,P. Polakowski,Johannes Müller,Thomas Mikolajick,J. Hontschel,B. Rice,John Pellerin,Sven Beyer +22 more
TL;DR: This work shows the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology, a viable choice for overall low-cost and low-power IoT applications in 22nm and beyond technology nodes.
Journal ArticleDOI
Unveiling the double-well energy landscape in a ferroelectric layer
Michael J. Hoffmann,Franz P. G. Fengler,Melanie Herzig,Terence Mittmann,Benjamin Max,Uwe Schroeder,Raluca Negrea,Pintilie Lucian,Stefan Slesazeck,Thomas Mikolajick +9 more
TL;DR: A ferroelectric thin film that behaves as a single domain is found to exhibit both negative capacitance and the predicted double-well polarization–energy relationship, which could lead to fast adoption ofnegative capacitance effects in future products with markedly improved energy efficiency.
Proceedings ArticleDOI
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Martin Trentzsch,Stefan Flachowsky,Ralf Richter,Jan Paul,Berthold Reimer,Dirk Utess,S. Jansen,Halid Mulaosmanovic,Stefan Müller,Stefan Slesazeck,J. Ocker,M. Noack,Johannes Müller,P. Polakowski,J Schreiter,Sven Beyer,Thomas Mikolajick,B. Rice +17 more
TL;DR: The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.