Stefan W. Glunz

Bio: Stefan W. Glunz is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Silicon & Solar cell. The author has an hindex of 64, co-authored 507 publications receiving 17212 citations. Previous affiliations of Stefan W. Glunz include University of Freiburg.

Improved quantitative description of Auger recombination in crystalline silicon

Abstract: An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity $n$-type and $p$-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.

Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells

Abstract: Recently, several parameters relevant for modeling crystalline silicon solar cells were improved or revised, e.g., the international standard solar spectrum or properties of silicon such as the intrinsic recombination rate and the intrinsic carrier concentration. In this study, we analyzed the influence of these improved state-of-the-art parameters on the limiting efficiency for crystalline silicon solar cells under 1-sun illumination at 25°C, by following the narrow-base approximation to model ideal solar cells. We also considered bandgap narrowing, which was not addressed so far with respect to efficiency limitation. The new calculations that are presented in this study result in a maximum theoretical efficiency of 29.43% for a 110-μm-thick solar cell made of undoped silicon. A systematic calculation of the I-V parameters as a function of the doping concentration and the cell thickness together with an analysis of the loss current at maximum power point provides further insight into the intrinsic limitations of silicon solar cells.

Polymers for 3D Printing and Customized Additive Manufacturing

Abstract: Additive manufacturing (AM) alias 3D printing translates computer-aided design (CAD) virtual 3D models into physical objects. By digital slicing of CAD, 3D scan, or tomography data, AM builds objects layer by layer without the need for molds or machining. AM enables decentralized fabrication of customized objects on demand by exploiting digital information storage and retrieval via the Internet. The ongoing transition from rapid prototyping to rapid manufacturing prompts new challenges for mechanical engineers and materials scientists alike. Because polymers are by far the most utilized class of materials for AM, this Review focuses on polymer processing and the development of polymers and advanced polymer systems specifically for AM. AM techniques covered include vat photopolymerization (stereolithography), powder bed fusion (SLS), material and binder jetting (inkjet and aerosol 3D printing), sheet lamination (LOM), extrusion (FDM, 3D dispensing, 3D fiber deposition, and 3D plotting), and 3D bioprinting....

Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26

Abstract: The efficiency of silicon solar cells has a large influence on the cost of most photovoltaics panels. Here, researchers from Kaneka present a silicon heterojunction with interdigitated back contacts reaching an efficiency of 26.3% and provide a detailed loss analysis to guide further developments.

Halide Perovskite Photovoltaics: Background, Status, and Future Prospects

Abstract: The photovoltaics of organic–inorganic lead halide perovskite materials have shown rapid improvements in solar cell performance, surpassing the top efficiency of semiconductor compounds such as CdTe and CIGS (copper indium gallium selenide) used in solar cells in just about a decade. Perovskite preparation via simple and inexpensive solution processes demonstrates the immense potential of this thin-film solar cell technology to become a low-cost alternative to the presently commercially available photovoltaic technologies. Significant developments in almost all aspects of perovskite solar cells and discoveries of some fascinating properties of such hybrid perovskites have been made recently. This Review describes the fundamentals, recent research progress, present status, and our views on future prospects of perovskite-based photovoltaics, with discussions focused on strategies to improve both intrinsic and extrinsic (environmental) stabilities of high-efficiency devices. Strategies and challenges regardi...

Efficient, stable and scalable perovskite solar cells using poly(3-hexylthiophene)

Abstract: Perovskite solar cells typically comprise electron- and hole-transport materials deposited on each side of a perovskite active layer. So far, only two organic hole-transport materials have led to state-of-the-art performance in these solar cells1: poly(triarylamine) (PTAA)2–5 and 2,2ʹ,7,7ʹ-tetrakis(N,N-di-p-methoxyphenylamine)-9,9ʹ-spirobifluorene (spiro-OMeTAD)6,7. However, these materials have several drawbacks in terms of commercialization, including high cost8, the need for hygroscopic dopants that trigger degradation of the perovskite layer9 and limitations in their deposition processes10. Poly(3-hexylthiophene) (P3HT) is an alternative hole-transport material with excellent optoelectronic properties11–13, low cost8,14 and ease of fabrication15–18, but so far the efficiencies of perovskite solar cells using P3HT have reached only around 16 per cent19. Here we propose a device architecture for highly efficient perovskite solar cells that use P3HT as a hole-transport material without any dopants. A thin layer of wide-bandgap halide perovskite is formed on top of the narrow-bandgap light-absorbing layer by an in situ reaction of n-hexyl trimethyl ammonium bromide on the perovskite surface. Our device has a certified power conversion efficiency of 22.7 per cent with hysteresis of ±0.51 per cent; exhibits good stability at 85 per cent relative humidity without encapsulation; and upon encapsulation demonstrates long-term operational stability for 1,370 hours under 1-Sun illumination at room temperature, maintaining 95 per cent of the initial efficiency. We extend our platform to large-area modules (24.97 square centimetres)—which are fabricated using a scalable bar-coating method for the deposition of P3HT—and achieve a power conversion efficiency of 16.0 per cent. Realizing the potential of P3HT as a hole-transport material by using a wide-bandgap halide could be a valuable direction for perovskite solar-cell research. A double-layered halide architecture for perovskite solar cells enables the use of dopant-free poly(3-hexylthiophene) as a hole-transport material, forming stable and scalable devices with a certified power conversion efficiency of 22.7 per cent.

Photovoltaic materials: Present efficiencies and future challenges

Abstract: Recent developments in photovoltaic materials have led to continual improvements in their efficiency. We review the electrical characteristics of 16 widely studied geometries of photovoltaic materials with efficiencies of 10 to 29%. Comparison of these characteristics to the fundamental limits based on the Shockley-Queisser detailed-balance model provides a basis for identifying the key limiting factors, related to efficient light management and charge carrier collection, for these materials. Prospects for practical application and large-area fabrication are discussed for each material.