Showing papers by "Stephen J. Pearton published in 1980"

Deep trapping centres in n-GaAs surface barrier diodes for nuclear radiation detection

Abstract: Deep level transient spectroscopy has been applied for the first time in the study of deep level trapping centres in n-GaAs nuclear radiation detectors. Devices from bulk and epitaxial material with net donor impurity densities from 5×1013 to 3×1016 cm−3 have been studied and several common levels observed. The Poole-Frenkel effect has been identified in three levels (Ev+0.19 eV, Ec−0.62 eV, Ec−0.73 eV) in the epitaxial GaAs. A value for the Poole-Frenkel constant of β = 4.7±1.4×10−4 eV V−½ cm½ was obtained for the Ec−0.62 eV level, compared to the theoretical value for GaAs, 2.3×10−4 eV V−1/2 cm1/2.

Transient conductance spectroscopy measurements of defect states in γ-irradiated n-channel silicon field effect transistors with possible γ-dosemeter applications

Abstract: A deep level transient capacitance spectroscopy (DLTS) system, modified for the measurement of transient conductance, has been used to observe Y-ray induced defect centres in the gate junction of 2N4416 Si field effect transistors. The defect concentrations increased linearly with Y-dose in the range 50 kGy to 10 x 10 kGy (5-1000 Mrad) for the common EC 0.17 eV level, and in the range 500 kGy to 10 x 10 kGy (50-1000 Mrad) for the levels E_ L* 0.22 eV and E 0.44 eV. Another common level, a hole trap at E + 0.42 eV, \s V was the only minority trap observed. The technique may be useful for measuring Y-fluxes in situations inaccessible to standard dosemeters (e.g. flux-mapping). * AINSE Postgraduate student on attachment to the AAEC from the Department of Physics, University of Tasmania. National Library of Australia card number and ISBN 0 642 59703 0 The following descriptors have been selected from the INIS Thesaurus to describe the subject content of this report for information retrieval purposes. For further details please refer to IAEA-INIS-12 (INIS: Manual for Indexing) and IAEA-INIS-13 (INIS: Thesaurus) published in Vienna by the International Atomic Energy Agency. EMISSION SPECTROSCOPY; VACANCIES; RADIATION EFFECTS; GAMMA RADIATION; FIELD EFFECT TRANSISTORS; SILICON; DOSEMETERS