Showing papers by "Stephen J. Pearton published in 1983"

Deep level effects in silicon and germanium after plasma hydrogenation

Abstract: Deep level electron and hole trapping states are observed in n-and p-type silicon after plasma hydrogenation at 250 - 300°C. These defect states are not observed after exposure to a helium plasma. In contrast to these results, no hydrogen or helium plasma-induced levels are seen in n-or p-type germanium after similar heat treatment of up to 600°C. However, hydrogenation of p-type germanium at 600°C significantly enhances the solubility of the rapidly diffusing impurity copper, compared to untreated material. Reproducing the experiments using a helium plasma does not affect the copper solubility. A simple model which accounts for the experimental results is proposed.

Hydrogen passivation of argon sputter-etch induced electrically active defects on Ge, Si, and GaAs

Abstract: The passivation of argon sputter-etch induced electrically active defects on Ge, Si, and GaAs surfaces by reaction with atomic hydrogen has been observed using deep level transient spectroscopy. A broad band of defect states, giving rise to non-linear Arrhenius plots, appears to be associated with the induced damage centres. For n-type Ge and p-type Si, a 20-min exposure to atomic hydrogen at 180°C is shown to neutralize the damage created by a 5-min, 6 kV (DC), Ar gas sputter-etch. For n-type GaAs a 1-h exposure at 250°C was sufficient, whilst n-type Si required a 1-h exposure to the hydrogen plasma at 300°C to passivate the damage. In each case, to remove the sputter-etch damage by thermal annealing required temperatures approximately 100°C higher, for periods of approximately 2 h.

The mobility of a nickel-related centre in reverse biased germanium n+p diodes

Abstract: The motion of a nickel-related centre ( E v + 0.14 eV) in reverse biased germanium n + p junction has been observed using deep level transient spectroscopy. The concentration profile of this deep acceptor defect is presented as a function of the duration of the electric field application. An estimated mobility of 2.0 ± 1.1 × 10 −13 cm 2 Vs −1 at 25°c was obtained for the nickel-related centre.