Showing papers by "Stephen J. Pearton published in 1989"

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

Abstract: Recent advances in heterostructure bipolar transistor technology have created a need for p‐type doping at levels ≥1020 cm−3. Furthermore, such levels may eliminate the need for alloying during ohmic contact formation. We have achieved p‐type doping levels as high as 5×1020 cm−3 using an unconventional dopant, C, derived from the gaseous source chemical, trimethylgallium (TMG), during metalorganic molecular beam epitaxial (MOMBE) growth of GaAs. We have controllably achieved doping levels between 1019 and 5×1020 cm−3 by diluting the TMG flow with another metalorganic, triethylgallium (TEG). By utilizing the so‐called δ‐doping or atomic planar doping method we have also been able to grow C‐doped spikes with hole concentrations as high as 7×1019 cm−3, with a full width at half maximum of ∼50 A at 300 K. This doping level is the highest yet reported for planar doping, and the narrow width indicates that the C atoms are restricted to one or two atomic planes. By switching out the TMG, and switching in the TEG ...

Implant‐induced high‐resistivity regions in InP and InGaAs

Abstract: We have investigated the effects of ion bombardment on the electrical properties of intentionally doped InP and InGaAs grown by metalorganic molecular‐beam epitaxy. The sheet resistivity and mobility of n+InP (Sn) and n+InGaAs (Sn) or p+InGaAs (Be) epilayers grown on semi‐insulating InP substrates were measured as a function of ion species (O, B, H, or Fe), ion dose (1012–1015 cm−2), and post‐implant annealing temperature (100–600 °C). In n+InP, the resistivity after bombardment goes through a maximum with annealing temperature, reaching a value of ∼106 Ω/⧠ for 0.5‐μm‐thick films after implantation with H or O and annealing at 200–300 °C. The as‐grown resistivity is restored by annealing above 500 °C. Ion doses below 1012 cm−2 actually lead to a decrease in resistivity through the creation of shallow donor levels. By contrast, the implantation of Fe above a critical dose where the Fe density exceeds the dopant concentration leads to the formation of thermally stable, high‐resistivity (>106 Ω/⧠) material. The temperature dependence of the resistivity shows an activation energy of 0.67 eV, which corresponds to the acceptor level of substitutional Fe in InP. Both n+InGaAs and p+InGaAs show somewhat similar behavior after implantation with maximum resistivities of ∼105 Ω/⧠ regardless of implant species. Once again for relatively low doses of O or H (below ∼1013 cm−2 in this case) there is creation of shallow defect levels that lower the resistivity of the material. The formation of these levels in InP has been investigated in more detail by measuring the depth‐dependent carrier profile in implanted high‐resistivity InP. The profile of the damage‐induced centers is in close correlation with the nuclear energy deposition profile of the implanted ion in some cases, and with the profiles of stoichiometric excess due to unequal recoil of the lattice constituents in other cases.

Hydrogen passivation of acceptors in p‐InP

Abstract: The problem of hydrogenation of InP without surface degradation has been surmounted by exposure of the InP surface to a hydrogen plasma through a thin SiNx(H) cap layer. This layer is H permeable at the hydrogenation temperature of 250 °C, but P or PH3 impermeable thus minimizing PH3 loss and the attendant In droplet formation. In contrast to our results for this type of plasma exposure of GaAs, we find that shallow acceptors in InP are heavily passivated, whereas shallow donors are only very weakly affected. For example, p+‐InP(Zn) of 3×1018 cm−3 has its residual hole concentration reduced to ≤3×1014 cm−3 over a depth of 1.3 μm by a 250 °C, 0.5 h deuteration. The presence of acceptors impedes H (or D) indiffusion, as indicated by D diffusion under the same conditions occurring to depths of 18 and 35 μm in p‐InP (Zn, 2×1016 cm−3) and n‐InP (S or Sn), respectively. Annealing for 1 min at 350 °C causes the acceptor passivation to be lost and the hole concentration to be returned to its prehydrogenation leve...

Electrical and structural changes in the near surface of reactively ion etched InP

Abstract: Near‐surface (∼1000 A) modification in the net carrier concentration in n‐type InP (n=6×1015–1.5×1017 cm−3) was observed after reactive ion etching (RIE) in Cl‐based (CCl2F2/O2) or organic‐based (C2H6/H2) discharges. The carrier loss is slightly more pronounced in the latter case, due possibly to the creation of deep level, compensating acceptors at greater depths as a result of implantation of the light hydrogen ions. Near‐complete recovery of the initial carrier density occurs after annealing at 500 °C for 30 s. Structural disorder is detected by ion channeling to depths of ∼400 A after C2H6/H2 RIE with a self‐bias of 380 V. This disorder shows significant recovery after 400 °C, 30 s annealing. Current‐voltage measurements on Au Schottky diodes showed ohmic behavior after etching of the InP in a C2H6/H2 discharge, due to the nonstoichiometric surface remaining after RIE. Diodes fabricated on CCl2F2/O2 etched material show only a slight increase in reverse current compared to unetched control samples.

Reactive ion etching induced damage in GaAs and AlGaAs using C2H6/H2/Ar or CCl2F2/O2 gas mixtures

Abstract: Changes in the near‐surface electrical properties of n‐type (n=1×1017 cm−3) GaAs and AlGaAs after reactive ion etching in C2H6/H2/Ar or CCl2F2/O2 discharges (4 mTorr, 0.85 W cm−2) were investigated by current‐voltage (I‐V) and capacitance‐voltage measurements on Schottky diodes. Carrier reductions of approximately an order of magnitude were observed immediately after etching GaAs and AlGaAs in ethane‐hydrogen‐argon; much smaller changes (∼20%) were observed using freon‐12–oxygen. For both gas chemistries, annealing in the range 200–300 °C produced the most ideal I‐V characteristics in GaAs, whereas 300–400 °C was required for AlGaAs. Replacing H2 by D2 allowed high sensitivity atomic profiling using secondary ion mass spectrometry. Permeation of D2 to depths of ∼0.5 μm is observed in both GaAs and AlGaAs after etching—the D2 diffuses rapidly around 400 °C where dopant reactivation occurs.

Reactive ion etching of GaAs with CCl2F2:O2: Etch rates, surface chemistry, and residual damage

Abstract: The reactive ion etching of GaAs with a CCl2F2:O2 discharge was investigated as a function of gas flow rate (10–60 sccm), total pressure (2–50 mTorr), power density (0.25–1.31 W cm−2), gas composition (0%–70% O2), and etch time (1–64 min). The etch rate decreases with increasing gas flow rate, increases with increasing power density, and goes through a maximum at a gas composition of 75:25 CCl2F2:O2 under our conditions. After etching at low‐power densities (0.56 W cm−2) and for high CCl2F2 ratios (19:1 to O2), carbon and chlorine could be detected in the GaAs to a depth of less than 15 A by x‐ray photoelectron spectroscopy. Under these conditions there was a Ga deficiency to a depth of ∼100 A, which we ascribe to surface roughening and the preferential vaporization of As2O3 over Ga2O3. At high‐power densities (1.31 W cm−2) a polymeric layer several hundred angstroms thick containing CCl and CF bonds was observed on the GaAs surface. Etching under O2‐rich conditions did not lead to any additional creation...

Carbon in GaAs: implantation and isolation characteristics

Abstract: Carbon was implanted into GaAs at doses between 1013 and 5×1014 cm−2, either by itself or with Ga coimplantation at room temperature or 200 °C. Activation percentages as high as 40% were obtained for C+Ga implants at 5×1014 cm−2 compared to 106 Ω/⧠) layers in C‐doped (p∼2×1020 cm−3) GaAs is possible by using oxygen bombardment doses above 5×1014 cm−2. Under these conditions the evolution of the implanted layer resistivity with annealing temperature can be described by the usual trap‐related compensation mechanism.

Carbon implantation in InP

Abstract: Carbon implanted into InP at doses between 5×1012 and 5×1014 cm−2, either by itself or with B, Ga, Al, or P coimplantation at room temperature or 200 °C, displays donor activity for all annealing temperatures (600–900 °C; 10 s). Phosphorus coimplantation enhances the donor activation percentage over carbon‐only implantation, while coimplants of B, Ga, and Al reduce the donor activity. Peak carrier concentrations of 3×1019 cm−3 were obtained for C+P implantation at a dose of 5×1014 cm−2, followed by annealing at 700 °C for 10 s. Annealing at >700 °C leads to a reduction in net donor density through carbon site switching to produce self‐compensation. The C diffusivity is estimated to be less than 2.5×10−14 cm−2 s−1 at 800 °C.

Material‐dependent amorphization and epitaxial crystallization in ion‐implanted AlAs/GaAs layer structures

Abstract: When AlAs/GaAs layer samples are subjected to Ar+ ion bombardment at liquid‐nitrogen temperature, it is shown that very different damage structures are produced in the two materials. While the GaAs is relatively easily amorphized, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. Epitaxial regrowth of buried amorphous GaAs layers of thicknesses up to 150 nm can be induced by rapid thermal annealing. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.

Structure and dynamics of the Be-H complex in GaAs

Abstract: The symmetry and reorientation kinetics of the Be-H complex in GaAs have been determined in a uniaxial-stress study. The splitting of the 2036 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ vibrational absorption band under stress shows that the complex has trigonal symmetry. The size of the splitting is large and is consistent with a bond-centered position for the H atom, similar to the case of B-H in Si. At temperatures near 120 K the complex can be aligned by an applied stress. A study of the annealing kinetics of the alignment shows that the motion of H from bond-centered site to bond-centered site about the Be acceptor is thermally activated with an energy of 0.37 eV.

Interaction of Be and O in GaAs

Abstract: Oxygen implanted at a concentration above that of the acceptors in p‐type GaAs is shown to create thermally stable, high‐resistivity material only in the case of Be doping in the GaAs. The effect is not seen for Mg, Zn, or Cd doping. Similarly, there is no apparent interaction of O with n‐type dopants (S or Si) in our measurements. The Be‐O complex in p‐type GaAs is a deep donor, creating material whose sheet resistivity shows an apparent thermal activation energy of 0.59 eV for a structure involving a thin layer (5000 A) of oxygen compensated, Be‐doped GaAs on a semi‐insulating substrate.

Implantation temperature dependence of electrical activation, solubility, and diffusion of implanted Te, Cd, and Sn in GaAs

Abstract: The relationship between electrical activity, dopant solubility, and diffusivity was investigated as a function of the substrate temperature during implantation of Te, Cd, and Sn ions into GaAs. Implant doses of these species in the range 5×1012–5×1015 cm−2 were performed in the temperature range −196 to 400 °C, followed by either transient (950 °C, 5 s) or furnace (450–900 °C, 20 min) annealing. The redistribution after such annealing was found to depend on the implant temperature, and was always greatest for Cd followed by Sn and Te. The degree of electrical activation was in the same order, but there was essentially no correlation of electrical activity with dopant solubility. Te, for example, showed soluble fractions of ∼90% for a dose of 1015 cm−2 after annealing at 850 °C or higher, regardless of the initial implant temperature. By sharp contrast, the electrically active fraction under these conditions was in the range 0.8%–3.4%. There was also no apparent correlation of the degree of electrical activity with the presence of defects visible in transmission electron microscopy. The energy required to activate the implanted ions fell broadly into two categories: ‘‘low’’ values in the range ∼0.4–0.8 eV (which included Cd implanted or annealed under any condition, and elevated temperature implants of Sn and Te), and ‘‘high’’ values in the range 1.7–1.9 eV [which included implants of Sn and Te performed at −196 °C, or high dose (1015 cm−2) room‐temperature implants of these species].

Temperature dependence of reactive ion etching of GaAs with CCl2F2:O2

Abstract: The etch rate of GaAs during reactive ion etching (RIE) in a CCl2F2:O2 discharge (4 mTorr, 0.56 W cm−2) shows a strong temperature dependence, increasing from ∼500 A min−1 at 50 °C to 2800 A min−1 at 400 °C. Arrhenius plots of the etch rate show two activation energies (0.17 eV from 50 to 150 °C and 0.11 eV from 150 to 400 °C). There is no significant plasma power density dependence of the etch rate at elevated temperatures (≥100 °C) in contrast to the strong dependence at 50 °C. The surface morphology undergoes smooth‐to‐rough‐to‐smooth‐to‐rough transitions at ∼150, 250, and 400 °C, respectively, although TiPtAu Schottky diodes exhibit near‐ideal behavior on GaAs etched at 150 °C. The As‐to‐Ga ratio in the first 100 A from the surface increases with increasing RIE temperature, with chloride residues absent above 150 °C. Fluorocarbon residues were present on all samples, but were limited to the first 10–15 A. As determined by x‐ray photoelectron spectroscopy, fluorine was present almost exclusively as met...

Characterization of InP/GaAs/Si structures grown by atmospheric pressure metalorganic chemical vapor deposition

Abstract: The thickness dependence of material quality of InP‐GaAs‐Si structures grown by atmospheric pressure metalorganic chemical vapor deposition was investigated. The InP thickness was varied from 1–4 μm, and that of the GaAs from 0.1–4 μm. For a given thickness of InP, its ion channeling yield and x‐ray peak width were essentially independent of the GaAs layer thickness. The InP x‐ray peak widths were typically 400–440 arcsec for 4‐μm‐thick layers grown on GaAs. The GaAs x‐ray widths in turn varied from 320–1000 arcsec for layer thicknesses from 0.1–4 μm. Cross‐sectional transmission electron microscopy showed high defect densities at both the InP‐GaAs and GaAs‐Si interfaces. In 4‐μm‐thick InP layers the average threading dislocation density was in the range (3–8)×108 cm−2 with a stacking fault density within the range (0.4–2)×108 cm2. The He+ ion channeling yield near the InP surface was similar to that of bulk InP (χmin∼4%), but rose rapidly toward the InP‐GaAs heterointerface where it was typically around ...

Implantation characteristics of InSb

Abstract: Damage introduction by implantation of Be and Si into InSb, and its removal by rapid thermal annealing in the range 300–400 °C for 20 s was investigated by Rutherford backscattering and transmission electron microscopy. There is good recovery of the lattice upon annealing at 450 °C provided the InSb was not amorphized during the implantation step. At the same time, there is limited redistribution of Be for these annealing conditions, but for Si there is marked diffusion even during a nominal room‐temperature implant. Lowering the sample temperature to 77 K during the implant stops this redistribution, with a near‐Gaussian ion distribution resulting. The activation of Be is of the order of 50% over the dose range 1013–1015 cm−2. In most cases there is a marked similarity in implant properties of InSb to those of GaSb.

Electrical effects of atomic hydrogen incorporation in GaAs-on-Si

Abstract: We have introduced atomic hydrogen by two methods into GaAs layers epitaxially grown on Si substrates, namely, by exposure to a hydrogen plasma or by proton implantation. In both cases, when proper account is taken of shallow dopant passivation or compensation effects, there is a significant improvement in the reverse breakdown voltage of simple TiPtAu Schottky diodes. Proton implantation into undoped (n=3×1016 cm−3) GaAs‐on‐Si leads to an increase in this breakdown voltage from 20 to 30 V, whereas plasma hydrogenation improves the value from 2.5 to 6.5 V in n‐type (2×1017 cm−3) GaAs‐on‐Si. Annealing above 550 °C removes the beneficial effects of the hydrogenation, coincident with extensive redistribution of the hydrogen. This leaves an annealing temperature window of about 50 °C in the H‐implanted material, in comparison to 150 °C for the plasma‐hydrogenated material. The hydrogen migrates out of the GaAs to both the surface and heterointerface, where it shows no further motion even at 700 °C. Trapping i...

Rapid thermal annealing of GaAs in a graphite susceptor—comparison with proximity annealing

Abstract: Rapid thermal annealing of GaAs within an enclosed, SiC‐coated graphite susceptor is shown to eliminate slip formation during implant activation treatments (900 °C, 10 s) and to provide much better protection against surface degradation at the edges of wafers compared to the more conventional proximity method. The peak carrier concentration obtained in Si‐implanted (3×1012 cm−2, 60 keV) GaAs by both methods is comparable, but the wafers annealed in the susceptor have tighter carrier profile width distributions measured over the whole wafer area.

Carbon and zinc delta doping for Schottky barrier enhancement on n‐type GaAs

Abstract: The growth of thin (50–100 A), C or Zn δ‐doped layers on n‐type GaAs is shown to yield large enhancements in the effective Schottky barrier height (ΦB) of TiPtAu contacts subsequently deposited on the material. The incorporation of a single C δ‐doped layer (p=1.5×1020 cm−3, 50 A wide) within 100 A of the surface leads to a barrier height of 0.93 eV, a significant increase over the value for a control sample (0.76 eV). The use of two sequential δ‐doped layers leads to an apparent barrier height in excess of the GaAs band gap (ΦB=1.67 eV). This appears to be consistent with the predictions of a unified defect model. Zinc δ doping (p∼3×1018 cm−3) in a similar fashion produces barrier heights of 0.81 eV for one spike and 0.95 eV for two spikes.

Bias‐controlled intersubband wavelength switching in a GaAs/AlGaAs quantum well laser

Abstract: The light emission characteristic of a GaAs/AlGaAs single quantum well laser with an intracavity monolithic loss modulator has been investigated. Discrete, widely separated, wavelength switching from the first (875 nm) to the second (842 nm) subband is achieved by changing the applied modulator bias. In addition, we show that 2 mW of lasing light power may be modulated with a change in current of 250 μA and a voltage change of 1 V.

Zinc delta doping of GaAs by organometallic vapor phase epitaxy

Abstract: Zinc delta‐doped layers have been grown by atmospheric pressure organometallic vapor phase epitaxy. Secondary‐ion mass spectroscopy and electrochemical capacitance‐voltage profiling were used to measure the spatial distribution of the Zn for both as‐grown and annealed samples. The narrowest atomic profiles had full width at half maxima of 70 A for peak Zn concentrations of ≤3×1018 cm−3. The as‐grown width of these profiles is attributed to a combination of dopant memory effect and growth‐related diffusion during the actual formation of the delta‐doped layer. An effective diffusion coefficient D of ≤7×10−17 cm2/s is estimated for a growth temperature of 625 °C. Rapid thermal annealing at 900 °C for 5 s of several samples grown under various conditions led to calculated values of D in the range 0.5–1.0×10−12 cm2/s.

Depth dependence of silicon donor passivation and reactivation in hydrogenated GaAs

Abstract: The depth dependence of silicon donor passivation and reaction in hydrogenated GaAs is directly determined for the first time by using 1000 A layers of 1017 cm−3 Si‐doped GaAs, buried at various depths in undoped GaAs. Low‐frequency hydrogen plasma exposure for 30 min at 250 °C reduces the carrier density by only a factor of 3 in layers buried 3 μm deep, but by three orders of magnitude in layers buried 0.3 μm deep. Annealing at 400 °C for 5 min restores 100% of the original carrier density in the 3‐μm‐deep layer but only 73% in the 0.3‐μm‐deep layer. Plasma exposure and 400 °C annealing together do not improve the mobility in the molecular beam epitaxial samples at any depth. Hydrogen‐related acceptors seen by photoluminescence account for these effects.

Etch rates and surface chemistry of GaAs and AlGaAs reactively ion etched in C2H6/H2

Abstract: The etch rates of GaAs and AlxGa1−xAs (x=0.09–1) in C2H6/H2 were investigated as a function of time (1–12 min), gas flow rate (5–25 sccm), total pressure (4–30 mTorr), plasma power density (0.56–1.32 W cm−2), and percentage of C2H6 in the discharge (10%–50%). The etch rates are constant with time, and decrease with increasing Al content in the AlGaAs. The maximum etch rates occur at 25% by volume C2H6 in H2 and increase linearly with increasing power density. Increasing the total pressure at constant gas composition reduces the etch rates by approximately a factor of 2 between 4 and 30 mTorr. The etched surfaces have smooth morphologies for C2H6 concentrations less than ∼40% of the total gas volume. A layer of subsurface dislocations approximately 40 A deep were observed in GaAs by transmission electron microscopy for the highest‐power density discharges, while the surfaces for all samples are As‐deficient to a depth of ∼30 A after reactive ion etching. Polymer deposition is not significant for C2H6 volum...

Sn-H Complex in Hydrogen Pass Ivated GaAs

Abstract: It is confirmed that Sn donors in GaAs are passivated by exposure to a hydrogen plasma. The Sn-H complexes give rise to vibrational absorption bands at 1327.8 cm-1 and 967.7 cm-1 that are assigned to H-stretching and H-wagging modes respectively. A study of the thermal stability of the Sn-H complexes shows that they dissociate for annealing temperatures above ~150°C. The properties of the Sn-H complexes are compared to those of other donor-H complexes. Our results suggest a configuration for the complex with H at the antibonding site adjacent to the Sn.

Performance of GaAs MESFET's on InP substrates

Abstract: The fabrication of GaAs MESFET's with 0.9- mu m gate length on InP substrates, after growth of the heteroepitaxial material by metalorganic chemical vapor deposition (MOCVD) is described. The MESFETs exhibit extrinsic transconductances of 377 mS-mm/sup -1/, the highest value yet reported for GaAs-on-InP devices. The drain I-V characteristic shows excellent saturation, a knee voltage of 0.75 V, and no light sensitivity. A unity current-gain cutoff frequency of 22 GHz and a maximum frequency of oscillation of 30 GHz are obtained for these MESFETs. >

Increase in photoluminescence of Zn-doped p-type InP after hydrogenation

Abstract: We report on the effect of hydrogenation on the lowtempeTature (5.5 K) photoluminescence properties of Zndoped p-type (p ∼ 3 × 1018cm-3) InP substrates. The photoluminescence spectrum of the as-grown sample shows a ZnIn acceptor-related transition near the band-edge at l.386eV, a Zn-related PL band at l.214eV and a phosphorus vacancy Vp-related PL band at 1.01 eV. After hydrogenation of the samples by exposure to hydrogen plasma, which completely passivates the ZnIn acceptors over a depth of more than 1μ, the deep luminescence bands (1.214 and 1.01eV) disappeared, with a concomitant ∼ 2000-fold increase in the intensity of the near-band-edge emission. Such a large increase in radiative efficiency together with the elimination of the deep luminescence bands indicates hydrogen passivation of deep nonradiative centers in addition to passivation of shallow acceptors.

Role of vanadium in organometallic vapor phase epitaxy grown GaAs

Abstract: The electrical and photoluminescent properties of vanadium incorporated into GaAs epitaxial layers from a VO(OC2H5)3 source during organometallic vapor phase epitaxy were examined. The vanadium concentration in the GaAs was controllably varied from 1016 to 1018 atoms cm−3. Deep level transient spectroscopy showed the presence of an electron trap at Ec−0.15 eV which increased in concentration with vanadium content of the epitaxial layers. A maximum value of 8×1015 cm−3 for this trap was obtained. There were no midgap electron traps associated with vanadium. In intentionally Si‐doped epitaxial layers, co‐doping with vanadium was observed to have no effect in reducing the carrier density when the Si concentration was ≥4×1016 cm−3. The net carrier concentration profiles resulting from 29Si implantation into GaAs containing 1018 cm−3 of total V had sharper tails than for similar implantation into undoped material, indicating the presence of less than 1016 cm−3 V‐related acceptors. Photoluminescent spectra exhi...

Ion Implantation Processing of Gaas and Related Compounds

Abstract: The formation of doped or semi-insulating layers by ion implantation in both Ga- and In- based semiconductors is reviewed The Ga-based materials (GaAs, AIGaAs, GaP, GaSb) tend to show similar characteristics in terms of producing relatively low (n ≤ 3 × 1018 cm-3) maximum carrier densities for donor implanted layers, and much higher values for acceptor implants (p ≤ 5 × 1019 cm-3 ) Ion-induced damage is widely used for device isolation in these materials, with midgap levels associated with the damage trapping free carriers and leading to semi-insulating behaviour By contrast, the In-based materials (InP, InAs, InSb and InGaAs) show higher maximum carrier densities for acceptor implants than for donor implants, and the use of ion damage for isolation purposes is much less effective than in GaAs All of these materials display singularly poor regrowth characteristics, requiring in some cases the use of elevated temperature implantation to prevent amorphization

Damage‐induced high‐resistivity regions in Al0.48In0.52As

Abstract: The sheet resistivity of oxygen‐implanted n+‐Al0.48In0.52As grown on InP was measured as a function of oxygen ion dose and post‐implant annealing temperature. The sheet resistivity is >105 Ω/⧠ after implantation for doses in the range 1012–8×1013 cm−2, and increases to >107 Ω/⧠ after annealing at 500 °C. Temperature‐dependent Hall measurements show that the resistivity of this compensated AlInAs has a thermal activation energy of 0.68 eV. Above 600 °C the damage‐related compensation is removed and the material is returned to its original resistivity. We find no thermally stable, oxygen‐related deep acceptors in AlInAs, in contrast to the results for AlGaAs.

AlInAs/GaInAs heterostructure bipolar transistors grown by metalorganic chemical vapour deposition

Abstract: Al0.48In0.52As/Ga0.47In0.53As heterostructure bipolar transistors are demonstrated using metalorganic chemical vapour deposition. The transistors have a cutoff frequency of 80 GHz and a common-emitter breakdown voltage of 5.5 V.