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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
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Recent progress in processing and properties of ZnO
TL;DR: In this paper, the authors summarize recent progress in doping control, materials processing methods such as dry etching and Ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferromagnetism in transition-metal doped ZnO.
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A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
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Whispering-gallery mode microdisk lasers
TL;DR: In this paper, a new microlaser design based on the highreflectivity whisperinggallery modes around the edge of a thin semiconductor microdisk is described and initial experimental results are presented.
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Wide band gap ferromagnetic semiconductors and oxides
Stephen J. Pearton,Cammy R. Abernathy,M. E. Overberg,G. T. Thaler,David P. Norton,Nikoleta Theodoropoulou,Arthur F. Hebard,Yun Daniel Park,Fan Ren,Jihyun Kim,Lynn A. Boatner +10 more
TL;DR: In this paper, a review focusing on promising candidate materials (such as GaN, GaP and ZnO) is presented, where the introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature.