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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Recombination properties of dislocations in GaN
TL;DR: In this paper, the recombination activity of threading dislocations in n-GaN with different dislocation densities and different doping levels was studied using electron beam induced current (EBIC).
Journal ArticleDOI
Properties of Fe-doped semi-insulating GaN structures
TL;DR: In this article, the properties of semi-insulating GaN films with the lower part of the film doped with Fe are reported and the 300 K sheet resistivity of the films was 2×1010 Ω/square with an activation energy of the dark conductivity of 0.5 eV.
Journal ArticleDOI
Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes
Rohit Khanna,K. K. Allums,C. R. Abernathy,Stephen J. Pearton,Jihyun Kim,Fan Ren,R. Dwivedi,T. N. Fogarty,Richard Wilkins +8 more
TL;DR: In this article, GaN multi-quantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 525nm were irradiated with 40MeV protons to doses of 5×109−5×1010cm−2.
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GaN PN junction issues and developments
R. Hickman,J. M. Van Hove,Peter Chow,J. J. Klaassen,Andrew M. Wowchak,C. J. Polley,D.J King,Fan Ren,C. R. Abernathy,Stephen J. Pearton,K. B. Jung,H. Cho +11 more
TL;DR: In this article, the electron diffusion length in p-GaN doped at 1·1018 cm−3 was estimated to be 790 A, and the minority carrier lifetime in the p-gaN was found to be 24 ps to 0.24 ns.
Journal ArticleDOI
High density plasma etching of III–V nitrides
Catherine Vartuli,Stephen J. Pearton,C. R. Abernathy,Randy J. Shul,Arnold J. Howard,S.P. Kilcoyne,J.E. Parmeter,M. Hagerott-Crawford +7 more
TL;DR: In this article, two broad classes of plasma chemistry were examined for dry etching of GaN, AlN, and InN and the etch rates for CH4/H2-based plasmas are low (∼ 400 A/min) even under high microwave power (1000 W) electron cyclotron resonance conditions.