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Stephen J. Pearton

Researcher at University of Florida

Publications -  1988
Citations -  62995

Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.

Papers
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Hydrogen treatment effect on shallow and deep centers in GaSb

TL;DR: In this article, it was shown by spreading resistance and capacitance-voltage measurements that atomic hydrogen passivates shallow acceptors and donors in GaSb, and deep level passivation by hydrogen also occurs, as revealed by deep level transient spectroscopy measurements on Schottky diode structures.
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Mask erosion during dry etching of deep features in III-V semiconductor structures

TL;DR: In this article, the authors used self-bias during the etching of photoresist masks to minimize the effect of sidewall roughness on the underlying dielectric or semiconductor.
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Reactivation of acceptors and trapping of hydrogen in GaN/InGaN double heterostructures

TL;DR: In this paper, the authors show that the apparent thermal stability of hydrogen passivated Mg acceptors in GaN is a function of the annealing ambient employed, with H2 leading to a reactivation temperature approximately 150°C higher than N2.
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Fast detection of a protozoan pathogen, Perkinsus marinus, using AlGaN/GaN high electron mobility transistors

TL;DR: Results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN/GaN HEMTs for Perkinsus marinus detection and show a rapid response when the infected solution was added to the antibody-immobilized surface.
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Temperature dependence of reactive ion etching of GaAs with CCl2F2:O2

TL;DR: The etch rate of GaAs during reactive ion etching (RIE) in a CCl2F2:O2 discharge (4 mTorr, 0.56 W cm−2) shows a strong temperature dependence, increasing from ∼500 A min−1 at 50 °C to 2800 A min −1 at 400 C.