S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO
K. Ip,Kwang Hyeon Baik,Young-Woo Heo,David P. Norton,Stephen J. Pearton,Jeffrey R. LaRoche,B. Luo,Fan Ren,J. M. Zavada +8 more
TL;DR: In this paper, the minimum specific contact resistance, ρc, of ∼6×10−4'4'Ω'cm2 after annealing at 250'°C was obtained.
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High breakdown voltage Au/Pt/GaN Schottky diodes
G. T. Dang,A. P. Zhang,M. M. Mshewa,Fan Ren,J.-I. Chyi,Chien-Chieh Lee,C.-C. Chuo,Gou-Chung Chi,J. Han,S. N. G. Chu,Robert G. Wilson,Xian-An Cao,Stephen J. Pearton +12 more
TL;DR: Au/Pt/GaN Schottky diode rectifiers were fabricated with reverse breakdown voltage (VRB) up to 550 V on vertically depleting structures and >2000 V on lateral devices.
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Recessed gate GaN field effect transistor
Fan Ren,James Robert Lothian,Y. K. Chen,Robert F. Karlicek,L. Tran,M. Schurmann,Richard A. Stall,J. W. Lee,Stephen J. Pearton +8 more
TL;DR: In this paper, a n + n GaN metal semiconductor field effect transistor was fabricated, with the gate recess formed by Electron Cyclotron Resonance BCl 3 N 2 dry etching.
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Effect of inductively coupled plasma damage on performance of GaN–InGaN multiquantum-well light-emitting diodes
TL;DR: In this paper, a GaN multiquantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 420to505nm were exposed to either Ar or H2 inductively coupled plasmas as a function of both rf chuck power (controlling incident ion energy) and source power(controlling ion flux).
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High current bulk GaN Schottky rectifiers
TL;DR: In this article, GaN Schottky rectifiers employing guard-ring and SiO2 edge termination have been shown to have almost ideal forward current characteristics, with ideality factor 1.08 and specific on-state resistance as low as 2.6×10−3 Ω ǫ 2.