S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Effects of high-dose Mn implantation into ZnO grown on sapphire
Young-Woo Heo,M. Ivill,Kelly P. Ip,David P. Norton,Stephen J. Pearton,J. Kelly,R. Rairigh,Arthur F. Hebard,T. Steiner +8 more
TL;DR: In this paper, pulsed-laser deposition on c-plane Al2O3 substrates were annealed at temperatures up to 600°C to produce n-type carrier concentrations in the range 7.5×1015−1.5 × 1020 cm−3.
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Radiation effects in GaN materials and devices
TL;DR: In this paper, the effects of radiation damage on GaN materials and devices such as light-emitting diodes and high electron mobility transistors are discussed, and it is shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs.
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Hydrogen local modes and shallow donors in ZnO
TL;DR: In this paper, the annealing behavior of free carrier absorption, O-H vibrational absorption, and photoluminescence lines previously associated with H-related donors in ZnO has been studied.
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Ion‐implanted GaN junction field effect transistor
John C. Zolper,Randy J. Shul,Albert G. Baca,Robert G. Wilson,Stephen J. Pearton,Richard A. Stall +5 more
TL;DR: In this paper, selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs), achieving a gate turn-on voltage of 1.84 V at 1 mA/mm of gate current.
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Electrical transport properties of single ZnO nanorods
Young-Woo Heo,Li-Chia Tien,David P. Norton,B. S. Kang,Fan Ren,Brent P. Gila,Stephen J. Pearton +6 more
TL;DR: In this article, single ZnO nanorods with diameters of ∼130nm were grown on Au-coated Al2O3 substrates by catalyst-driven molecular beam epitaxy.