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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Proton irradiation of ZnO schottky diodes
Rohit Khanna,Kelly P. Ip,K. K. Allums,K.H. Baik,C. R. Abernathy,Stephen J. Pearton,Young-Woo Heo,David P. Norton,Fan Ren,S. Shojah-Ardalan,Richard Wilkins +10 more
TL;DR: In this article, the authors present results on the changes in electrical performance of bulk Pt/ZnO Schottky rectifiers exposed to 40-MeV protons at fluences from 5×109 cm −2 to 5×1010 cm−2.
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High quality amorphous indium zinc oxide thin films synthesized by pulsed laser deposition
Gabriel Socol,Doina Craciun,Ion N. Mihailescu,N. Stefan,Cristina Besleaga,Lucian Ion,Stefan Antohe,Kyeong-Won Kim,David P. Norton,Stephen J. Pearton,Aurelian Catalin Galca,Valentin Craciun +11 more
TL;DR: In this article, the authors used a pulsed laser deposition technique on glass substrates from room temperature up to 100°C to grow indium zinc oxide films from targets with two different In atomic concentration [In/(In+Zn)] of 40% and 80%.
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Dry Etching of GaAs , AlGaAs , and GaSb in Hydrochlorofluorocarbon Mixtures
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Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors
Robert C. Fitch,J. K. Gillespie,Neil Moser,T. Jenkins,James S. Sewell,D. Via,Antonio Crespo,Amir M. Dabiran,Peter Chow,Andrei Osinsky,Fan Ren,Stephen J. Pearton +11 more
TL;DR: In this article, the authors measured the electrical characteristics of 250 devices on the same 2 in. diameter wafer and found that the Ir-based contacts on AlGaN/GaN high electron mobility transistors (HEMTs) have lower average specific contact resistance after annealing at 850 °C for 30 s (4.6×10−5
Properties of Mn-Implanted BaTiO 3 , SrTiO 3 , and KTaO 3
David P. Norton,Nikoleta Theodoropoulou,Arthur F. Hebard,John D. Budai,Lynn A. Boatner,Stephen J. Pearton,Robert G. Wilson +6 more
TL;DR: In this paper, Mn ion implantation into single-crystal BaTiO3(K), Sr TiO3,o r KTaO 3~Ca! was investigated for its effects on the magnetic properties of these materials.