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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Effect of Si Co Doping on Ferromagnetic Properties of GaGdN
Jennifer K. Hite,R. M. Frazier,Ryan Davies,G. T. Thaler,C. R. Abernathy,Stephen J. Pearton,J. M. Zavada,E. Brown,Uwe Hommerich +8 more
TL;DR: In this article, single-phase GaGdN and GaGaN were grown on sapphire substrates by gas source molecular beam epitaxy using solid Gd, Ga, and Si sources and active nitrogen derived from a RF nitrogen plasma source.
Journal ArticleDOI
Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions
Ya-Shi Hwang,Li Liu,Fan Ren,Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,E. A. Kozhukhova,N. G. Kolin,V. M. Boiko,S. S. Vereyovkin,V. S. Ermakov,Chien-Fong Lo,Oleg Laboutin,Yu Cao,Jerry W. Johnson,N. I. Kargin,R. V. Ryzhuk,Stephen J. Pearton +17 more
TL;DR: In this article, the authors showed that a decrease in two-dimensional electron gas (2DEG) mobility and a shift of capacitance-voltage (C-V) characteristics were observed when irradiated with 10 MeV electrons to fluences of 2.5 to 3.3.
Journal ArticleDOI
10 MeV proton damage in β-Ga2O3 Schottky rectifiers
Jiancheng Yang,Zhiting Chen,Fan Ren,Stephen J. Pearton,Gwangseok Yang,Jihyun Kim,Jonathan Lee,Elena Flitsiyan,Leonid Chernyak,Akito Kuramata +9 more
TL;DR: In this article, the electrical performance of vertical geometry Ga2O3 rectifiers was measured before and after 10'MeV proton irradiation at a fixed fluence of 1014'cm−2, as well as subsequent annealing up to 450'°C.
Journal ArticleDOI
Comparison of F 2 plasma chemistries for deep etching of SiC
TL;DR: In this article, a number of F2-based plasma chemistries (NF3, SF6, PF5, and BF3) were investigated for high rate etching of SiC.
Journal ArticleDOI
Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application
Fan Ren,Cammy R. Abernathy,Stephen J. Pearton,J. R. Lothian,P. W. Wisk,T. R. Fullowan,Young-Kai Chen,L. W. Yang,S.T. Fu,R. S. Brozovich,H.H. Lin +10 more
TL;DR: In this paper, an InGaP/GaAs HBT with carbon-doped base layers grown by metal organic molecular beam epitaxy (MOMBE) with excellent DC, RF, and microwave performance is demonstrated.