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Stephen J. Pearton

Researcher at University of Florida

Publications -  1988
Citations -  62995

Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.

Papers
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Journal ArticleDOI

Sn doping of GaAs and AlGaAs by MOMBE using tetraethyltin

Cammy R. Abernathy, +3 more
- 01 Sep 1991 - 
TL;DR: The feasibility of TESn as a Sn dopant source for GaAs and AlGaAs grown by metalorganic molecular beam epitaxy (MOMBRE) was investigated in this article.
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AlInAs/InGaAs based heterojunction bipolar transistors fabricated by electron cyclotron resonance etch

T. R. Fullowan, +3 more
- 01 May 1991 - 
TL;DR: In this paper, a dry etch fabrication technology for high-speed AlInAs/InGaAs heterojunction bipolar transistors (HBTs) utilizing low-damage electron cyclotron resonance (ECR) CH4/H2/Ar plasma etching is detailed.
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Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors

Chien-Fong Lo, +10 more
- 01 Jul 2011 - 
TL;DR: In this article, the critical voltage for degradation of AlGaN/GaN High Electron Mobility Transistors (HEMTs) during off-state biasing stress was significantly increased.
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Comparison of Dual-Stack Dielectric Field Plates on β-Ga2O3 Schottky Rectifiers

Patrick H. Carey, +5 more
- 03 May 2019 - 
TL;DR: In this article, the effects of bilayer field plates with various dielectric (SiO2/SiNx, Al2O3/ SiNx and HfO 2/Si Nx) on Ga2O 3 Schottky rectifier performance were investigated.
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Activation characteristics of ion-implanted Si+ in AlGaN

Y. Irokawa, +4 more
- 02 May 2005 - 
TL;DR: In this paper, a multiple-energy Si+ implantation in the range 30-360 keV into Al0.13Ga0.87N for n-type doping was carried out at room temperature, followed by annealing at 1150-1375 °C for 5 min.