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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Cl2-based dry etching of the AlGaInN system in inductively coupled plasmas
Hyun Cho,Catherine Vartuli,C. R. Abernathy,S. M. Donovan,Stephen J. Pearton,Randy J. Shul,J. Han +6 more
TL;DR: In this article, the effects of additive gas (Ar, N 2, H 2 ), discharge composition and ICP source power and chuck power on etch rate and surface morphology have been performed.
Journal ArticleDOI
Single‐energy, MeV implant isolation of multilayer III‐V device structures
Robert Elliman,Mark C Ridgway,Chennupati Jagadish,Stephen J. Pearton,Fan Ren,James Robert Lothian,T. R. Fullowan,Avishay Katz,C. R. Abernathy,Rose Fasano Kopf +9 more
TL;DR: In this paper, a single energy, implant isolation scheme for thick (≥1.5 μm) III-V semiconductor device structures such as heterojunction bipolar transistors (HBTs) is described.
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Lattice vibrational properties of ZnMgO grown by pulsed laser deposition
A. I. Belogorokhov,Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,E. A. Kozhukhova,Hyun-Sik Kim,David P. Norton,Stephen J. Pearton +7 more
TL;DR: In this paper, the authors studied the vibrational modes in n-type and p-type ZnMgO films doped with P (Mg composition of 7at.%) grown by pulsed laser deposition on sapphire.
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ECR plasma etching of GaN, AlN and InN using iodine or bromine chemistries
TL;DR: In this paper, the dry etching characteristics of GaN, AlN and InN in HI-H/sub 2/-Ar and HBr-H 1/2/Ar were examined using electron cyclotron resonance discharges operating at high microwave power (1000 W) and low pressure (1 mtorr).
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Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,T. G. Yugova,A. V. Markov,Amir M. Dabiran,Andrew M. Wowchak,B. Cui,J. Q. Xie,Andrei Osinsky,Peter Chow,Stephen J. Pearton +11 more
TL;DR: In this paper, the electrical properties of AlGaN∕GaN high electron mobility transistor structures grown on composite GaN(Fe)∕GAN buffers by molecular beam epitaxy were reported.