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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices
Lars F. Voss,K. Ip,Stephen J. Pearton,Randy J. Shul,M. E. Overberg,Albert G. Baca,Carlos Anthony Sanchez,Jeffrey Stevens,Marino Martinez,M. G. Armendariz,Gregg A. Wouters +10 more
TL;DR: In this paper, an inductively coupled plasma etch was used to achieve high yield of SiC through wafer via holes without trenching or micromasking and with excellent electrical connection after subsequent metal plating across full wafers.
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Characteristics of carbon monoxide sensors made by polar and nonpolar zinc oxide nanowires gated AlGaN/GaN high electron mobility transistor
TL;DR: In this article, the authors used polar and non-polar ZnO nanowires modified gate to detect carbon monoxide (CO) at room temperature and achieved a detection limit of 400ppm and 3200ppm in the open cavity with continuous gas flow.
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Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes
Yu-Lin Wang,Byung Hwan Chu,Chih-Yang Chang,K. H. Chen,Yu Zhang,Qian Sun,Jung Han,Stephen J. Pearton,Fan Ren +8 more
TL;DR: The N-polar GaN Schottky diodes showed stronger and faster response to 4% hydrogen than that of Ga-Polar Schottkys as mentioned in this paper, which was attributed to the high reactivity of the N-face surface termination.
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Reproducible group‐V partial pressure rapid thermal annealing of InP and GaAs
TL;DR: In this paper, the effectiveness of two types of SiC-coated graphite susceptors in providing degradation-free rapid thermal annealing of InP and GaAs was compared.
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Nanoscale magnetic regions formed in GaN implanted with Mn.
Nikoleta Theodoropoulou,K.P. Lee,M. E. Overberg,S. N. G. Chu,Arthur F. Hebard,C. R. Abernathy,Stephen J. Pearton,Robert G. Wilson +7 more
TL;DR: In this article, selected-area diffraction pattern analysis indicates that these regions are GaxMn1-xN with a different lattice constant to the host GaN and the presence of the GaMnN corresponds to ferromagnetic behavior of the samples with a Curie temperature of approximately 250 K.