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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
Alexander Y. Polyakov,Camille Haller,N. B. Smirnov,A. S. Shiko,Ivan Shchemerov,S. V. Chernykh,L. A. Alexanyan,P. B. Lagov,P. B. Lagov,Yu. S. Pavlov,J.-F. Carlin,Mauro Mosca,Mauro Mosca,Raphaël Butté,Nicolas Grandjean,Stephen J. Pearton +15 more
TL;DR: In this paper, two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GAN superlattice (SL) were examined.
Journal ArticleDOI
Remote sensing system for hydrogen using GaN Schottky diodes
TL;DR: In this paper, the characteristics and operation of a GaN Schottky diode-based remote sensing system for hydrogen is described, where the detection mechanism is a change in effective barrier height of the Pt or Pd contact on the GaN in the presence of even 600ppm of H 2.
Journal ArticleDOI
Proton implantation effects on electrical and optical properties of undoped AlGaN with high Al mole fraction
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,N. V. Pashkova,Stephen J. Pearton,J. M. Zavada,Robert G. Wilson +6 more
TL;DR: In this paper, electrical and optical properties of undoped n-AlGaN films with Al composition close to 40% were studied before and after implantation of various doses of 100 keV protons.
Journal ArticleDOI
Dry etching of bulk single-crystal ZnO in CH 4 /H 2 -based plasma chemistries
Wantae Lim,Lars F. Voss,Rohit Khanna,Brent P. Gila,David P. Norton,Stephen J. Pearton,Fan Ren +6 more
TL;DR: In this article, the effect of inert gas additive (He, Ar, Xe) to CH4/H2 discharges for dry etching of single crystal ZnO was examined.
Book ChapterDOI
InGaN Single-Quantum-Well LEDs
TL;DR: In this paper, the hole-compensation mechanism of p-type A1GaN has been elucidated and high-brightness blue and blue-green light emitting diodes (LEDs) with a luminous intensity of 2 cd have been fabricated using these techniques and are now commercially available.