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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Characterization of GaAs and Si by a microwave photoconductance technique
TL;DR: In this paper, a non-destructive microwave photoconductance technique has been employed to investigate the uniformity of electrical transport properties in semi-insulating, doped, or implanted GaAs.
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Exhaled-Breath Detection Using AlGaN ∕ GaN High Electron Mobility Transistors Integrated with a Peltier Element
B. S. Kang,Hung-Ta Wang,Fan Ren,Brent P. Gila,Cammy R. Abernathy,Stephen J. Pearton,Donn M. Dennis,Jerry W. Johnson,Pradeep Rajagopal,John C. Roberts,Edwin L. Piner,K. J. Linthicum +11 more
TL;DR: In this paper, an AlGaN/GaN high electron mobility transistors (HEMT) integrated with a Peltier element is demonstrated for the detection of exhaled-breath condensate.
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Influence of redeposition on the plasma etching dynamics
TL;DR: In this paper, the degree of redeposition of sputtered species during the etching of platinum (Pt), barium-strontium-titanate (BST), strontiumbismuth-tantalate (SBT), and photoresist (PR) in a high-density argon plasma was investigated.
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Neutron irradiation effects in AlGaN/GaN heterojunctions
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. V. Markov,Stephen J. Pearton,N. G. Kolin,D. I. Merkurisov,V. M. Boiko,Marek Skowronski,In Hwan Lee +9 more
TL;DR: In this paper, it was shown that the mobility and sheet conductivity of AlGaN/GaN heterojunctions start to decrease only after exposure to doses higher than 10 15 cm −2.
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Small area InGaP emitter/carbon doped GaAs base HBTs grown by MOMBE
Fan Ren,Cammy R. Abernathy,Stephen J. Pearton,J. R. Lothian,S. N. G. Chu,P. W. Wisk,T. R. Fullowan,B. Tseng,Young-Kai Chen +8 more
TL;DR: In this article, the authors reported high performance selfaligned InGaP/GaAs HBTs using a base layer with a sheet resistance of 135 Ω/□, achieving a DC current gain of 25 for 2×5 μm2 devices.