S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Electroluminescence from ZnO nanowire/polymer composite p-n junction
Chih-Yang Chang,Fu-Chun Tsao,C. J. Pan,Gou-Chung Chi,Hung-Ta Wang,J.J. Chen,Fan Ren,David P. Norton,Stephen J. Pearton,Kuei-Hsien Chen,Li-Chyong Chen +10 more
TL;DR: The characteristics of a hybrid p-n junction consisting of the holeconducting polymer poly(3,4-ethylene-dioxythiophene)-poly(styrene-sulfonate) (PEDOT/PSS) and n-ZnO nanorods grown on an n-GaN layer on sapphire are reported in this article.
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High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
Jiancheng Yang,Shihyun Ahn,Fan Ren,Stephen J. Pearton,Soohwan Jang,Jihyun Kim,Akito Kuramata +6 more
TL;DR: In this paper, Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse currentvoltage characteristics were measured at temperatures in the range of 25-100 °C.
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Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors
B. S. Kang,Fan Ren,Lin Wang,Charles Lofton,Weihong Tan,Stephen J. Pearton,Amir M. Dabiran,Andrei Osinsky,Peter Chow +8 more
TL;DR: In this article, an all-electronic detection approach for biological sensing was proposed.Ungated AlGaN∕GaN high-electron-mobility transistor (HEMT) structures were functionalized in the gate region with aminopropyl silane.
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Room temperature deposited indium zinc oxide thin film transistors
Yu-Lin Wang,Fan Ren,Wantae Lim,David P. Norton,Stephen J. Pearton,Ivan I. Kravchenko,J. M. Zavada +6 more
TL;DR: In this article, a depletion mode indium zinc oxide (IZO) channel thin film transistors were fabricated on glass substrates from layers deposited at room temperature using rf magnetron sputtering.
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Oxygen and zinc vacancies in as-grown ZnO single crystals
TL;DR: In this article, it was shown that oxygen and zinc vacancies are formed in as-grown ZnO bulk crystals grown from melt without being subjected to irradiation, from electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) studies.