Stephen J. Pearton

TL;DR: In this article, a smart pixel prototype field effect transistor-self-electrooptic-effect device (FET-SEED) integrated optoelectronic amplifier was demonstrated.

TL;DR: Wet etch rates at 25°C for Zn0.9Mg0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300-1100 nm · min−1 with HCl/H2O (5×10−3−2×10 −2 M) and 120-300 nm· min− 1 with H3PO4/H 2 O (5 × 10 −3 −2 −2 × 10−2 M), with thermal activation energies of 2 −3 kCal ·

TL;DR: In this paper, high-quality GaAs-AlGaAs heterojunction bipolar transistors (HBTs) in which the carbon-doped base layers (p=10/sup 10/10/s/sup 20/ cm/sup -3/, 400-800 AA thick) were grown by metalorganic molecular-beam epitaxy (MOMBE) and a subsequent regrowth using metalorganic chemical vapor deposition (MOCVD) is used to provide the n/sup +/ AlGaAs emitter and GaAs/InGaAs contact layers

TL;DR: In this article, electrical properties and deep trap spectra are reported for MgZnO(P) films grown by pulsed laser deposition on undoped n-ZnNO substrates.

TL;DR: In this article, the etch masks are used to minimize parasitic resistances and capacitances resulting from the lateral separation of these contacts, and the chemistries employed for these fabrication steps are reviewed, together with examples of processing sequences for heterojunction bipolar transistors and novel microdisk lasers that may form the basis of future electronic and microphotonic circuits.