S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO
J.S. Wright,Rohit Khanna,Lars F. Voss,L. Stafford,Brent P. Gila,David P. Norton,Stephen J. Pearton,Hung-Ta Wang,Soohwan Jang,Timothy J. Anderson,J.J. Chen,B. S. Kang,Fan Ren,Hongen Shen,Jeffrey R. LaRoche,Kelly P. Ip +15 more
TL;DR: In this article, Au contacts were deposited on bulk, n-type single-crystal ZnO at either 77 K or 300 K and the difference in contact behavior were stable to anneal temperatures of ∼300 K.
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Zinc delta doping of GaAs by organometallic vapor phase epitaxy
TL;DR: In this paper, secondary ion mass spectroscopy and electrochemical capacitance-voltage profiling were used to measure the spatial distribution of the Zn for both as-grown and annealed samples.
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Ion-implantation and activation behavior of Si in MBE-Grown GaAs on Si substrates for GaAs MESFET's
TL;DR: The suitability of MBE-grown GaAs layers on Si substrates has been studied for ion-implanted GaAs MESFET technology in this article, where uniform Si ion implants into 4µm-thick GaAs layer on Si were annealed at 900°C for 10 s, using a rapid-thermal-annealing (RTA) system.
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Low-temperature oxygen diffusion in silicon
TL;DR: In this paper, the diffusion coefficient of a mobile oxygen species introduced in p-type silicon from a plasma source at near ambient temperatures is determined to be D0=3.0×10−10
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Dry etching mechanism of copper and magnetic materials with UV illumination
TL;DR: In this article, an etch mechanism based on the subprocesses occurring in an inductively coupled plasma (ICP) reactor was proposed to better understand the dry etching of copper and magnetic materials with UV illumination.